MJD50T4G
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 200µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
| Power - Max | 1.56W |
| Frequency - Transition | 10MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | DPAK-3 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
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AOZ1031AI |
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Alpha & Omega Semiconductor Inc |
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AOZ1031AI |
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AOZ1031AI |
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A&O |
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AOZ1031AI |
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AOZ1031AI |
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1.28 >100 шт. 0.64 |
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| MBRS3200T3G | 4 | 116.00 | ||||||
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| MBRS3200T3G | TOKMAS | 456 | 4.42 | |||||
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