MJD50T4G
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 200µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
| Power - Max | 1.56W |
| Frequency - Transition | 10MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | DPAK-3 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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AOZ1031AI |
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Alpha & Omega Semiconductor Inc |
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AOZ1031AI |
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AOZ1031AI |
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A&O |
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AOZ1031AI |
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AOZ1031AI |
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4-7 НЕДЕЛЬ | 480 |
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| CL31B104KBCNNNC | SAMSUNG | 12 054 | 1.14 | |||||
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| MBRS3200T3G | ON SEMICONDUCTOR |
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| MBRS3200T3G | VISHAY |
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| MBRS3200T3G | ONS |
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| MBRS3200T3G | 4 | 116.00 | ||||||
| MBRS3200T3G | ON SEMICONDUCTOR | 1 760 |
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| MBRS3200T3G | TOKMAS | 248 | 7.93 | |||||
| MBRS3200T3G | FUXIN | 7 123 | 7.42 | |||||
| MBRS3200T3G | ONSEMI |
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| OB2273MP | ON-BRIGHT | 4 | 18.99 | |||||
| OB2273MP | 2 | 75.60 | ||||||
| OB2273MP | 1 |
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| OB2273MP | 4-7 НЕДЕЛЬ | 92 |
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