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FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 580mA, 10V |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 960mA |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 8.2nC @ 10V |
Input Capacitance (Ciss) @ Vds | 140pF @ 25V |
Power - Max | 2W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-261-4, TO-261AA |
Корпус | SOT-223 |
IRFL210PBF (MOSFET) HEXFET® Power MOSFET
Производитель:
|
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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BAW62 | FAIR |
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BAW62 | NATIONAL SEMICONDUCTOR |
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BAW62 | PHILIPS |
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BAW62 | NXP |
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BAW62 |
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BAW62 | NATIONAL SEMICONDUCTOR |
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BAW62 | PHILIPS | 36 |
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BAW62 | Fairchild Semiconductor |
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BAW62 | FAIRCHILD |
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BAW62 | NXP | 2 367 |
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IRF7319PBF |
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Полевой транзистор N+P-канальный 30V, 6,5/4, 9A, 2,0W | INTERNATIONAL RECTIFIER |
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IRF7319PBF |
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Полевой транзистор N+P-канальный 30V, 6,5/4, 9A, 2,0W | INTERNATIONAL RECTIFIER | 70 |
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IRF7319PBF |
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Полевой транзистор N+P-канальный 30V, 6,5/4, 9A, 2,0W | 40 |
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IRF7319PBF |
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Полевой транзистор N+P-канальный 30V, 6,5/4, 9A, 2,0W | INFINEON |
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MJD50T4G | ONS |
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MJD50T4G | ON Semiconductor |
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MJD50T4G |
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MJD50T4G | ON SEMICONDUCTOR | 157 |
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NDC7003P | FAIR |
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NDC7003P |
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88.00 | |||||
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NDC7003P | FAIRCHILD |
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NDC7003P | FAIRCHILD | 9 |
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NDC7003P | Fairchild Semiconductor |
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NDC7003P | ONS |
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Si4126DY |
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N-channel 30-v (d-s) mosfet | VISHAY |
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Корзина
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