SI2302DS
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Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | TrenchMOS™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 3.6A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2.5A |
| Vgs(th) (Max) @ Id | 650mV @ 1mA |
| Gate Charge (Qg) @ Vgs | 10nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 230pF @ 10V |
| Power - Max | 830mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | TO-236AB |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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Si2302DS N-Channel 1.25-W, 2.5-V MOSFET
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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FDS4410 | FAIR |
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FDS4410 | FSC |
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FDS4410 | FAIRCHILD |
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FDS4410 |
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116.00 | ||||
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FDS4410 | FAIRCHILD |
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FDS4410 | Fairchild Semiconductor |
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FDS4410 | FSC1 |
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FDS4410 | A&O |
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FDS4410 | ONS |
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FDS4410 | 4-7 НЕДЕЛЬ | 498 |
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| IRFS4410Z | INTERNATIONAL RECTIFIER |
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| IRFS4410Z |
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| IRFS4410Z | INFINEON |
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| IRFS4410Z | EVVO | 108 | 33.62 | |||||
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NE556N |
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NEC |
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NE556N |
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ST MICROELECTRONICS | 266 | 38.26 | ||
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NE556N |
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33.68 | |||
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NE556N |
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ST MICROELECTRONICS SEMI |
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NE556N |
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STMicroelectronics |
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NE556N |
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Texas Instruments |
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NE556N |
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TEXAS INSTRUMENTS | 16 |
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NE556N |
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КИТАЙ |
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NE556N |
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ST MICROELECTR |
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NE556N |
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TEXAS |
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NE556N |
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ST1 |
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NE556N |
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ST MICROELECTRO |
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NE556N |
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TEXAS INSTRUMEN |
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NE556N |
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4-7 НЕДЕЛЬ | 309 |
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NE556N |
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HGSEMI |
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SI2302CDS-T1-GE3 |
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Vishay/Siliconix |
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SI2302CDS-T1-GE3 |
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VISHAY |
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SI2302CDS-T1-GE3 |
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SILICONIX | 228 |
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SI2302CDS-T1-GE3 |
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VISHAY |
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SI2302CDS-T1-GE3 |
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| РУЧКА K16-1 BAKELITE D=6 | YRE |
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| РУЧКА K16-1 BAKELITE D=6 | КИТАЙ |
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