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Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 10A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | PowerTrench® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1340pF @ 15V |
Power - Max | 1W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SOICN |
Product Change Notification | Cu Wirebond Change 12/Oct/2007 Mold Compound Change 12/Dec/2007 |
FDS4410A Single N-Channel, Logic-Level, PowerTrenchand#174; MOSFET
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт | FAIR |
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт | FSC |
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт | FAIRCHILD |
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт |
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174.00 | ||
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт | FAIRCHILD |
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт | Fairchild Semiconductor |
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт | КИТАЙ |
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт | ONS |
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт | 4-7 НЕДЕЛЬ | 130 |
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KA2S0680 | FAIR |
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KA2S0680 | SAMSUNG | 52 | 181.44 | |||||
KA2S0680 | SEC |
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KA2S0680 |
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176.00 | ||||||
KA2S0680 | SAM |
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KA2S0680 | NO TRADEMARK |
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KA2S0680 | 4-7 НЕДЕЛЬ | 792 |
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MTS-1 |
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R-17N1-B5K,L-15KC | SONG HUEI ELEC |
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R-17N1-B5K,L-15KC | КИТАЙ |
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SN65LVDS1DBV |
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278.40 | ||||||
SN65LVDS1DBV | TEXAS INSTRUMENTS | 8 | 105.84 | |||||
SN65LVDS1DBV | TEXAS INSTRUMENTS | 4 |
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SN65LVDS1DBV | 4-7 НЕДЕЛЬ | 71 |
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Корзина
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