| Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 10A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | PowerTrench® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 31nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1340pF @ 15V |
| Power - Max | 1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
| Product Change Notification | Cu Wirebond Change 12/Oct/2007 Mold Compound Change 12/Dec/2007 |
| |
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
|
|
FDS4435 |
|
Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
|
FAIR
|
|
|
|
|
|
FDS4435 |
|
Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
|
FSC
|
|
|
|
|
|
FDS4435 |
|
Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
|
FAIRCHILD
|
|
|
|
|
|
FDS4435 |
|
Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
|
|
|
174.00
|
|
|
|
FDS4435 |
|
Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
|
FAIRCHILD
|
|
|
|
|
|
FDS4435 |
|
Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
|
Fairchild Semiconductor
|
|
|
|
|
|
FDS4435 |
|
Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
|
КИТАЙ
|
|
|
|
|
|
FDS4435 |
|
Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
|
ONS
|
|
|
|
|
|
FDS4435 |
|
Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
|
4-7 НЕДЕЛЬ
|
214
|
|
|
|
|
IRF7413 |
|
Транзистор полевой SMD N-MOS 30V, 13A, 2.5W
|
INTERNATIONAL RECTIFIER
|
|
|
|
|
|
IRF7413 |
|
Транзистор полевой SMD N-MOS 30V, 13A, 2.5W
|
|
4 651
|
23.51
|
|
|
|
IRF7413 |
|
Транзистор полевой SMD N-MOS 30V, 13A, 2.5W
|
INTERNATIONAL RECTIFIER
|
189
|
|
|
|
|
IRF7413 |
|
Транзистор полевой SMD N-MOS 30V, 13A, 2.5W
|
ФИЛИППИНЫ
|
|
|
|
|
|
IRF7413 |
|
Транзистор полевой SMD N-MOS 30V, 13A, 2.5W
|
INFINEON
|
|
|
|
|
|
IRF7413 |
|
Транзистор полевой SMD N-MOS 30V, 13A, 2.5W
|
1
|
|
|
|
|
|
IRF7413 |
|
Транзистор полевой SMD N-MOS 30V, 13A, 2.5W
|
EVVO
|
27 240
|
6.26
|
|
|
|
N25 ПРЕДОХРАНИТЕЛЬ 1.0A |
|
Предохранитель 1А
|
ROHM
|
|
|
|
|
|
N25 ПРЕДОХРАНИТЕЛЬ 1.0A |
|
Предохранитель 1А
|
|
|
18.00
|
|
|
|
|
SI2302DS |
|
|
PHILIPS
|
|
|
|
|
|
|
SI2302DS |
|
|
NXP
|
|
|
|
|
|
|
SI2302DS |
|
|
PHILIPS
|
|
|
|
|
|
|
SI2302DS |
|
|
|
|
|
|
|
|
|
SI2302DS |
|
|
NXP
|
|
|
|
|
|
SP8M3FU6TB |
|
|
ROHM
|
|
|
|
|
|
SP8M3FU6TB |
|
|
|
7
|
196.56
|
|
|
|
SP8M3FU6TB |
|
|
Rohm Semiconductor
|
|
|
|
|
|
SP8M3FU6TB |
|
|
1
|
|
|
|