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Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 10A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | PowerTrench® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1340pF @ 15V |
Power - Max | 1W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SOICN |
Product Change Notification | Cu Wirebond Change 12/Oct/2007 Mold Compound Change 12/Dec/2007 |
FDS4410A Single N-Channel, Logic-Level, PowerTrenchand#174; MOSFET
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
3296P 10K | 912 | 14.04 | ||||||
BAT54S-7-F | DIODES |
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BAT54S-7-F | DI |
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BAT54S-7-F |
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7.20 | ||||||
BAT54S-7-F | DIODES INC. | 248 |
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BAT54S-7-F | Diodes Inc |
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт | FAIR |
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт | FSC |
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт | FAIRCHILD |
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт |
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174.00 | ||
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт | FAIRCHILD |
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт | Fairchild Semiconductor |
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт | КИТАЙ |
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт | ONS |
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FDS4435 |
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Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт | 4-7 НЕДЕЛЬ | 214 |
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U2270B-MFPY |
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Read / Write Base Station IC | ATMEL |
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U2270B-MFPY |
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Read / Write Base Station IC |
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422.48 | ||||
U2270B-MFPY |
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Read / Write Base Station IC | ATMEL CORPORATION |
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U2270B-MFPY |
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Read / Write Base Station IC | MICRO CHIP |
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U2270B-MFPY |
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Read / Write Base Station IC | 4-7 НЕДЕЛЬ | 347 |
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РУЧКА KYP 16-18 BAKELIT D=6 | YRE |
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Корзина
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