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Версия для печати
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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| CB016M0470RSF-0810 | YAGEO |
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| CB016M0470RSF-0810 |
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| CB016M0470RSF-0810 |
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IRFL210PBF |
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Силовой МОП-Транзистор N-кан Vси = 200В, Rоткр = 1.5Ом, Id(25°C) = 0.96A | VISHAY |
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IRFL210PBF |
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Силовой МОП-Транзистор N-кан Vси = 200В, Rоткр = 1.5Ом, Id(25°C) = 0.96A | Vishay/Siliconix |
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IRFL210PBF |
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Силовой МОП-Транзистор N-кан Vси = 200В, Rоткр = 1.5Ом, Id(25°C) = 0.96A | INTERNATIONAL RECTIFIER |
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IRFL210PBF |
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Силовой МОП-Транзистор N-кан Vси = 200В, Rоткр = 1.5Ом, Id(25°C) = 0.96A |
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| MBRS3200T3G | ON SEMICONDUCTOR |
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| MBRS3200T3G | VISHAY |
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| MBRS3200T3G | ONS |
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| MBRS3200T3G | 4 | 116.00 | ||||||
| MBRS3200T3G | ON SEMICONDUCTOR | 1 760 |
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| MBRS3200T3G | TOKMAS | 344 | 8.00 | |||||
| MBRS3200T3G | FUXIN | 7 523 | 7.47 | |||||
| MBRS3200T3G | ONSEMI |
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| MJD50T4G | ONS | 676 | 60.22 | |||||
| MJD50T4G | ON Semiconductor | 1 996 | 42.40 | |||||
| MJD50T4G |
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| MJD50T4G | ON SEMICONDUCTOR | 157 |
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| MJD50T4G | 2495 |
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| SM6T36A | ST MICROELECTRONICS |
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| SM6T36A |
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| SM6T36A | ST MICROELECTRONICS SEMI | 758 |
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| SM6T36A | STMicroelectronics |
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| SM6T36A | КИТАЙ |
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| SM6T36A |
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| SM6T36A | HOTTECH |
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| SM6T36A | 1 |
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