| |
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
|
|
CC0805KRX7R9BB104 |
|
Керамический неполярный ЧИП конденсатор 0.1мкф,Х7R,10%, 0805, 50В
|
YAGEO
|
2 394 352
|
1.46
|
|
|
|
CC0805KRX7R9BB104 |
|
Керамический неполярный ЧИП конденсатор 0.1мкф,Х7R,10%, 0805, 50В
|
|
|
1.92
>100 шт. 0.96
|
|
|
|
CC0805KRX7R9BB104 |
|
Керамический неполярный ЧИП конденсатор 0.1мкф,Х7R,10%, 0805, 50В
|
ТАЙВАНЬ (КИТАЙ)
|
|
|
|
|
|
CC0805KRX7R9BB104 |
|
Керамический неполярный ЧИП конденсатор 0.1мкф,Х7R,10%, 0805, 50В
|
ТАЙВАНЬ(КИТАЙ)
|
|
|
|
|
|
CC0805KRX7R9BB104 |
|
Керамический неполярный ЧИП конденсатор 0.1мкф,Х7R,10%, 0805, 50В
|
PHYCOMP
|
|
|
|
|
|
CC0805KRX7R9BB104 |
|
Керамический неполярный ЧИП конденсатор 0.1мкф,Х7R,10%, 0805, 50В
|
YAGEO
|
20 644
|
|
|
|
|
|
D2MG |
|
|
GAINTA
|
3 937
|
405.79
|
|
|
|
|
D2MG |
|
|
|
|
|
|
|
|
|
D2MG |
|
|
RCT
|
271
|
250.71
|
|
|
|
|
ESD5Z12T1G |
|
|
ON SEMICONDUCTOR
|
|
|
|
|
|
|
ESD5Z12T1G |
|
|
ONS
|
|
|
|
|
|
|
ESD5Z12T1G |
|
|
ON SEMICONDUCTOR
|
55
|
|
|
|
|
|
ESD5Z12T1G |
|
|
ONSEMICONDUCTOR
|
|
|
|
|
|
|
ESD5Z12T1G |
|
|
|
|
|
|
|
|
|
MBRS3200T3G |
|
|
ON SEMICONDUCTOR
|
|
|
|
|
|
|
MBRS3200T3G |
|
|
VISHAY
|
|
|
|
|
|
|
MBRS3200T3G |
|
|
ONS
|
|
|
|
|
|
|
MBRS3200T3G |
|
|
|
4
|
116.00
|
|
|
|
|
MBRS3200T3G |
|
|
ON SEMICONDUCTOR
|
1 760
|
|
|
|
|
|
MBRS3200T3G |
|
|
TOKMAS
|
56
|
9.66
|
|
|
|
|
MBRS3200T3G |
|
|
FUXIN
|
9 847
|
9.36
|
|
|
|
|
MBRS3200T3G |
|
|
ONSEMI
|
|
|
|
|
|
|
TL331IDBVR |
|
|
TEXAS INSTRUMENTS
|
20
|
26.72
|
|
|
|
|
TL331IDBVR |
|
|
|
2 420
|
21.53
|
|
|
|
|
TL331IDBVR |
|
|
TEXAS INSTRUMENTS
|
6 016
|
|
|
|
|
|
TL331IDBVR |
|
|
TEXAS
|
|
|
|
|
|
|
TL331IDBVR |
|
|
4-7 НЕДЕЛЬ
|
|
|
|