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Структура транзистора: MOSFET |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | PowerTrench® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 8.8A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 8.8A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 24nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 1604pF @ 15V |
| Power - Max | 1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
| Product Change Notification | Cu Wirebond Change 12/Oct/2007 Mold Compound Change 12/Dec/2007 |
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FDS4435BZ Транзистор MOSFET, P, 30В, 8,8А, 2,5Вт
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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FDS4410 | FAIR |
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FDS4410 | FSC |
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FDS4410 | FAIRCHILD |
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FDS4410 |
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116.00 | ||||
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FDS4410 | FAIRCHILD |
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FDS4410 | Fairchild Semiconductor |
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FDS4410 | FSC1 |
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FDS4410 | A&O |
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FDS4410 | ONS |
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FDS4410 | 4-7 НЕДЕЛЬ | 498 |
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MCP2510-I/SO |
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Контроллер SPI - интерфейс, 3В ... 5.5В | MICRO CHIP | 11 | 369.19 | |
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MCP2510-I/SO |
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Контроллер SPI - интерфейс, 3В ... 5.5В |
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334.08 | ||
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MCP2510-I/SO |
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Контроллер SPI - интерфейс, 3В ... 5.5В | MICRO CHIP | 9 |
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MCP2510-I/SO |
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Контроллер SPI - интерфейс, 3В ... 5.5В | Microchip Technology |
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MCP2510-I/SO |
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Контроллер SPI - интерфейс, 3В ... 5.5В | 4-7 НЕДЕЛЬ | 102 |
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MCP2551-I/SN |
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MICRO CHIP | 1 159 | 144.65 | ||
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MCP2551-I/SN |
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223.20 | |||
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MCP2551-I/SN |
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Microchip Technology |
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MCP2551-I/SN |
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ТАИЛАНД |
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MCP2551-I/SN |
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MICRO CHIP | 1 |
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MCP2551-I/SN |
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4-7 НЕДЕЛЬ | 134 |
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MCP2551-I/SN |
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63 |
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| SN65LVDS1DBVR | TEXAS INSTRUMENTS | 53 | 113.65 | |||||
| SN65LVDS1DBVR | TEXAS INSTRUMENTS | 110 |
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| SN65LVDS1DBVR | TEXAS |
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| SN65LVDS1DBVR |
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| SN65LVDS1DBVR | 4-7 НЕДЕЛЬ | 120 |
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| SN65LVDS1DBVTG4 | TEXAS INSTRUMENTS |
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| SN65LVDS1DBVTG4 | TEXAS |
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