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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | STripFET™ |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 220 mOhm @ 1.5A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 2.5A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 21nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 850pF @ 25V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
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STN3PF06 (MOSFET) P-channel 60 V - 0.20 ? - 2.5 A - SOT-223 STripFET™ II Power MOSFET
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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AOD409 |
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Alpha & Omega Semiconductor Inc |
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AOD409 |
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560 | 19.93 | |||
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AOD409 |
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A&O |
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AOD409 |
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560 | 19.93 | |||
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AOD409 |
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ALPHA & OMEGA SEMICONDUCTOR |
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AOD409 |
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YOUTAI | 250 | 12.57 | ||
| BSP171PL6327 | INFINEON |
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| FDN5618P | FAIR |
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| FDN5618P | FSC |
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| FDN5618P | FAIRCHILD |
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| FDN5618P | FAIRCHILD | 24 |
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| FDN5618P | Fairchild Semiconductor |
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| FDN5618P | 7 040 | 8.42 | ||||||
| FDN5618P | МАЛАЙЗИЯ |
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| FDN5618P | ONS |
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| FDN5618P | ONS-FAIR |
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| FDN5618P | ON SEMICONDUCTOR |
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TL431CDBZR |
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33.64 | |||||
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TL431CDBZR | TEXAS INSTRUMENTS | 62 | 12.60 | ||||
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TL431CDBZR | NXP |
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TL431CDBZR | TEXAS INSTRUMENTS | 49 |
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TL431CDBZR | TEXAS |
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TL431CDBZR | NXP | 96 |
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TL431CDBZR | NEX-NXP |
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TL431CDBZR | ТI |
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TL431CDBZR | 4-7 НЕДЕЛЬ | 384 |
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| ВП1-2-2А | 5 144 | 40.48 | ||||||
| ВП1-2-2А | ПУТИВЛЬ | 6 698 | 8.40 | |||||
| ВП1-2-2А | РАДИОДЕТАЛЬ |
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| ВП1-2-2А | ЗУБОВА ПОЛЯНА | 692 | 46.20 | |||||
| ВП1-2-2А | ЗУЮОВА ПОЛЯНА |
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