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Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 15A, 10V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 120A |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Gate Charge (Qg) @ Vgs | 31nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 2830pF @ 10V |
| Power - Max | 89W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
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IRLR3717 (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 2SJ598 |
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P-MOS 60V, 12A, 23W | NEC |
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| 2SJ598 |
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P-MOS 60V, 12A, 23W |
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127.60 | ||||
| 3И306Г | 1 699 | 31.23 | ||||||
| 3И306Г | СТАРТ | 875 | 31.80 | |||||
| 3И306Г | 1 699 | 31.23 | ||||||
| 3И306Г | NO TRADEMARK |
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| 3И306Г | 218 |
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| 3И306Г | 78 |
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| 3И306Г | 93 |
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| 3И306Ж | 1 639 | 35.14 | ||||||
| 3И306Ж | СТАРТ | 1 900 | 16.96 | |||||
| 3И306Ж | 10 |
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| 3И306Ж | 207 |
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| 3И306Ж | 357 |
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| 3И306Ж | 4 |
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| 3И306Ж | 704 |
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| 3И306Ж | 716 |
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| FDN5618P | FAIR |
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| FDN5618P | FSC |
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| FDN5618P | FAIRCHILD |
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| FDN5618P | FAIRCHILD | 24 |
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| FDN5618P | Fairchild Semiconductor |
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| FDN5618P | 6 800 | 8.57 | ||||||
| FDN5618P | МАЛАЙЗИЯ |
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| FDN5618P | ONS |
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| FDN5618P | ONS-FAIR |
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| FDN5618P | ON SEMICONDUCTOR |
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| NTD20P06LT4G | ON SEMICONDUCTOR |
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| NTD20P06LT4G | ONS |
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| NTD20P06LT4G |
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| NTD20P06LT4G | ON SEMICONDUCTOR |
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| NTD20P06LT4G | ON SEMICONDUCTO |
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