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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMICONDUCTOR
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7 200
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3.18
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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4.00
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONS
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41 613
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3.78
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMICONDUCTOR
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2 533
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMIC
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMICONDUCTO
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONSEMICONDUCTOR
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONS-FAIR
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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LRC
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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VBSEMI
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4 944
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2.23
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AT45DB161D-SU |
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Память DataFlash (16 MBit, 100K циклов, SPI-compatible interface RapidS, 66 MHz max ...
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ATMEL
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25
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315.00
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AT45DB161D-SU |
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Память DataFlash (16 MBit, 100K циклов, SPI-compatible interface RapidS, 66 MHz max ...
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212.00
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AT45DB161D-SU |
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Память DataFlash (16 MBit, 100K циклов, SPI-compatible interface RapidS, 66 MHz max ...
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ATMEL CORPORATION
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AT45DB161D-SU |
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Память DataFlash (16 MBit, 100K циклов, SPI-compatible interface RapidS, 66 MHz max ...
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ТАЙВАНЬ (КИТАЙ)
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AT45DB161D-SU |
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Память DataFlash (16 MBit, 100K циклов, SPI-compatible interface RapidS, 66 MHz max ...
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ТАЙВАНЬ(КИТАЙ)
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AT45DB161D-SU |
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Память DataFlash (16 MBit, 100K циклов, SPI-compatible interface RapidS, 66 MHz max ...
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ADESTO TECHNOLOGY CORP.
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AT45DB161D-SU |
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Память DataFlash (16 MBit, 100K циклов, SPI-compatible interface RapidS, 66 MHz max ...
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ADESTO
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AT45DB161D-SU |
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Память DataFlash (16 MBit, 100K циклов, SPI-compatible interface RapidS, 66 MHz max ...
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4-7 НЕДЕЛЬ
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461
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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61 971
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1.12
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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PHILIPS
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800
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7.56
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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NXP
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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DIOTEC
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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INFINEON
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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MCC
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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DC COMPONENTS
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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GALAXY
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8 313
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1.16
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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OTHER
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12 800
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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PHILIPS
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1 424
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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ONS
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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КИТАЙ
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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NXP
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7 139
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YJ
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485 352
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1.17
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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GALAXY ME
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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HOTTECH
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265 578
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1.60
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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LRC
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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KLS
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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PANJIT
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SEMTECH
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4
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2.71
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YANGJIE
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YANGJIE (YJ)
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YOUTAI
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41 024
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1.92
>100 шт. 0.96
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
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9 506
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1.72
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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ZH
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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ASEMI
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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TRR
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YIXING
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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1
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SUNTAN
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593 501
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1.03
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SHIKUES
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12 164
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1.67
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IRL640PBF |
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Транзистор полевой N-канальный MOSFET, 200В, логический уровень включателя
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VISHAY
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182
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169.30
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IRL640PBF |
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Транзистор полевой N-канальный MOSFET, 200В, логический уровень включателя
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Vishay/Siliconix
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IRL640PBF |
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Транзистор полевой N-канальный MOSFET, 200В, логический уровень включателя
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VISHAY/IR
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IRL640PBF |
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Транзистор полевой N-канальный MOSFET, 200В, логический уровень включателя
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WB-05R (MW-5MR) PITCH 2.00 М |
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20 080
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1.23
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