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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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IRFS52N15D |
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Hexfet power mosfets discrete n-channel
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IRFS52N15D |
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Hexfet power mosfets discrete n-channel
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INTERNATIONAL RECTIFIER
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IRFS52N15D |
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Hexfet power mosfets discrete n-channel
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INFINEON
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IRFS41N15D |
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Hexfet power mosfets discrete n-channel
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INTERNATIONAL RECTIFIER
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40
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132.30
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IRFS41N15D |
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Hexfet power mosfets discrete n-channel
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IRFS41N15D |
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Hexfet power mosfets discrete n-channel
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IRLU9343 |
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Hexfet power mosfets discrete p-channel
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INTERNATIONAL RECTIFIER
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IRLU9343 |
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Hexfet power mosfets discrete p-channel
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57.20
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IRLU9343 |
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Hexfet power mosfets discrete p-channel
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INFINEON
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STP6NK60ZFP |
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MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
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126.00
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STP6NK60ZFP |
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MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
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ST MICROELECTRONICS
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671
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61.27
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STP6NK60ZFP |
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MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
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STMicroelectronics
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STP6NK60ZFP |
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MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
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ST MICROELECTR
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STP6NK60ZFP |
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MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
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КИТАЙ
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STP6NK60ZFP |
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MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
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ST MICROELECTRONICS SEMI
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STP6NK60ZFP |
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MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
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ST MICROELECTRO
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STP6NK60ZFP |
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MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
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4-7 НЕДЕЛЬ
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218
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SPB03N60C3 |
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280.00
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SPB03N60C3 |
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Infineon Technologies
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FCP16N60N |
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N-channel mosfet 600v, 16a, 0.170w
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FSC
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FCP16N60N |
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N-channel mosfet 600v, 16a, 0.170w
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Fairchild Semiconductor
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FCP16N60N |
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N-channel mosfet 600v, 16a, 0.170w
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FCP16N60N |
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N-channel mosfet 600v, 16a, 0.170w
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FAIRCHILD
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FCP16N60N |
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N-channel mosfet 600v, 16a, 0.170w
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FAIRCHILD
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FCP16N60N |
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N-channel mosfet 600v, 16a, 0.170w
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ONS
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IRFIB6N60APBF |
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Hexfet® power mosfet
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VISHAY
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IRFIB6N60APBF |
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Hexfet® power mosfet
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Vishay/Siliconix
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IRFIB6N60APBF |
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Hexfet® power mosfet
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VISHAY/IR
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IRFIB6N60APBF |
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Hexfet® power mosfet
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IRLR7821 |
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Hexfet power mosfets discrete n-channel
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INTERNATIONAL RECTIFIER
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IRLR7821 |
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Hexfet power mosfets discrete n-channel
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172.00
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IRLR7821 |
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Hexfet power mosfets discrete n-channel
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INFINEON
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMICONDUCTOR
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7 200
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2.18
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMICONDUCTOR
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2 533
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONS-FAIR
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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4.00
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONS
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10 244
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3.85
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMIC
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMICONDUCTO
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONSEMICONDUCTOR
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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LRC
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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VBSEMI
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5 120
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2.04
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2N7002MTF |
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N-channel small signal mosfet
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FAIR
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2N7002MTF |
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N-channel small signal mosfet
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Fairchild Semiconductor
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2N7002MTF |
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N-channel small signal mosfet
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FAIRCHILD
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2SJ352 |
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Биполярный транзистор P-MOS 200V, 8A, 100W (Comp. 2SK2221)
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HITACHI
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2SJ352 |
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Биполярный транзистор P-MOS 200V, 8A, 100W (Comp. 2SK2221)
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HITACHI SEMICONDUCTOR
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2SJ352 |
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Биполярный транзистор P-MOS 200V, 8A, 100W (Comp. 2SK2221)
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491.16
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2SJ352 |
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Биполярный транзистор P-MOS 200V, 8A, 100W (Comp. 2SK2221)
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RENESAS
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AO4407 |
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ALPHA & OMEGA SEMICONDUCTOR
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