| Current - Average Rectified (Io) | 200mA (DC) |
| Voltage - DC Reverse (Vr) (Max) | 250V |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 200mA |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Current - Reverse Leakage @ Vr | 100nA @ 200V |
| Diode Type | Standard |
| Скорость | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 50ns |
| Capacitance @ Vr, F | 5pF @ 0V, 1MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | SC-76, SOD-323 |
| Корпус | SOD-323 |
| Product Change Notification | Wire Change 08/Jun/2009 |
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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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MMBT3906LT1G |
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Транзистор GP SS PNP 40V
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ON SEMICONDUCTOR
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MMBT3906LT1G |
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Транзистор GP SS PNP 40V
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WILLAS ELECTRONIC
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MMBT3906LT1G |
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Транзистор GP SS PNP 40V
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FAIR
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MMBT3906LT1G |
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Транзистор GP SS PNP 40V
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ONS
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17 561
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2.61
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MMBT3906LT1G |
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Транзистор GP SS PNP 40V
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4.20
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MMBT3906LT1G |
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Транзистор GP SS PNP 40V
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ON SEMICONDUCTOR
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2 036
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MMBT3906LT1G |
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Транзистор GP SS PNP 40V
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ON SEMIC
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MMBT3906LT1G |
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Транзистор GP SS PNP 40V
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ON SEMICONDUCTO
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MMBT3906LT1G |
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Транзистор GP SS PNP 40V
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ONS-FAIR
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MMBT3906LT1G |
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Транзистор GP SS PNP 40V
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SEMTECH
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16
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1.51
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MMBT3906LT1G |
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Транзистор GP SS PNP 40V
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ONSEMI
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282
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5.95
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MMBTA06LT1G |
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Транзистор
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ON SEMICONDUCTOR
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MMBTA06LT1G |
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Транзистор
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ONS
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16 917
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4.57
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MMBTA06LT1G |
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Транзистор
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ON SEMICONDUCTOR
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2 988
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MMBTA06LT1G |
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Транзистор
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16
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MMBTA06LT1G |
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Транзистор
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ON SEMICONDUCTO
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MMBTA06LT1G |
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Транзистор
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ONSEMICONDUCTOR
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ON SEMICONDUCTOR
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ONS
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34 556
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4.21
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ON SEMICONDUCTOR
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160
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ON SEMICONDUCTO
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ONSEMICONDUCTOR
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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47 136
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2.33
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTOR
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12
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2.19
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ONS
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28 780
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4.79
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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7.20
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTOR
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1 003
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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GALAXY
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTO
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ONSEMICONDUCTOR
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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0.00
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T491X107K025AT |
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Kemet
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11 765
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136.63
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T491X107K025AT |
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T491X107K025AT |
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KEM
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T491X107K025AT |
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KEMET
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T491X107K025AT |
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KEMET/YAGEO
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Версия для печати
