| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 200mA, 5V |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 200mA |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Input Capacitance (Ciss) @ Vds | 50pF @ 25V |
| Power - Max | 225mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
| Product Change Notification | Possible Adhesion Issue 11/July/2008 Wire Change for SOT23 Pkg 26/May |
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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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|
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1500МКФ10В10X24105°C |
|
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CHEMI-CON
|
800
|
28.89
|
|
 |
 |
IRLML6402TRPBF |
|
P-канальный полевой транзистор 20В, 3.78А
|
INTERNATIONAL RECTIFIER
|
|
|
|
|
|
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IRLML6402TRPBF |
|
P-канальный полевой транзистор 20В, 3.78А
|
INTERNATIONAL RECTIFIER
|
48
|
|
|
|
|
|
IRLML6402TRPBF |
|
P-канальный полевой транзистор 20В, 3.78А
|
INFINEON
|
5 804
|
17.56
|
|
|
|
|
IRLML6402TRPBF |
|
P-канальный полевой транзистор 20В, 3.78А
|
|
328
|
7.36
|
|
|
|
|
IRLML6402TRPBF |
|
P-канальный полевой транзистор 20В, 3.78А
|
INFINEON
|
|
|
|
|
|
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IRLML6402TRPBF |
|
P-канальный полевой транзистор 20В, 3.78А
|
HOTTECH
|
|
|
|
|
|
|
IRLML6402TRPBF |
|
P-канальный полевой транзистор 20В, 3.78А
|
KLS
|
|
|
|
|
|
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IRLML6402TRPBF |
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P-канальный полевой транзистор 20В, 3.78А
|
TR
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|
|
|
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IRLML6402TRPBF |
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P-канальный полевой транзистор 20В, 3.78А
|
TRR
|
192
|
4.13
|
|
|
|
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KAN4511-0381B 4.5X4.5X3.8 MM |
|
|
|
4 800
|
1.68
|
|
|
|
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KAN4511-0381B 4.5X4.5X3.8 MM |
|
|
|
4 800
|
1.68
|
|
|
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KAN4511-0381B 4.5X4.5X3.8 MM |
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КИТАЙ
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ON SEMICONDUCTOR
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|
|
|
|
|
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
|
ONS
|
68
|
5.42
|
|
|
|
|
MMBTA42LT1G |
|
Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
|
ON SEMICONDUCTOR
|
160
|
|
|
|
|
|
MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
|
ON SEMICONDUCTO
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|
|
|
|
|
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ONSEMICONDUCTOR
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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20 016
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2.92
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|
|
|
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TOP222P |
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|
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208.48
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|
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TOP222P |
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PI
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TOP222P |
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Power Integrations
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TOP222P |
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4-7 НЕДЕЛЬ
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Версия для печати
