IRFL110TRPBF
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Версия для печати
| Current - Continuous Drain (Id) @ 25° C | 1.5A |
| Drain to Source Voltage (Vdss) | 100V |
| Rds On (Max) @ Id, Vgs | 540 mOhm @ 900mA, 10V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 8.3nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 180pF @ 25V |
| Power - Max | 2W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| BAS16XV2T1G | ON SEMICONDUCTOR | 370 | 16.44 | |||||
| BAS16XV2T1G | ON SEMICONDUCTOR | 540 |
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| BAS16XV2T1G | ONS | 16 802 | 5.01 | |||||
| BAS16XV2T1G | ONSEMICONDUCTOR |
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| BAS16XV2T1G |
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| BAS21HT1G | ONS | 45 248 | 3.41 | |||||
| BAS21HT1G | ON SEMICONDUCTOR |
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| BAS21HT1G | ON SEMICONDUCTOR | 17 284 |
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| BAS21HT1G |
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| BAS21HT1G | LRC |
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| BAS21HT1G | FUXIN | 21 792 | 1.22 | |||||
| BSS138LT1G | ONS | 28 708 | 8.57 | |||||
| BSS138LT1G | ON SEMICONDUCTOR | 77 | 5.61 | |||||
| BSS138LT1G | ON SEMICONDUCTOR | 553 |
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| BSS138LT1G | 23 600 | 3.65 | ||||||
| BSS138LT1G | ON SEMICONDUCTO |
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| BSS138LT1G | LRC |
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| BSS138LT1G | VBSEMI |
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| BSS138LT1G | JSMICRO | 21 334 |
1.88 >100 шт. 0.94 |
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| PBD-32 | 113 | 86.95 | ||||||
| PBD-32 | NXU |
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| PBD-32 | KLS | 1 752 | 35.13 | |||||
| PBD-32 | BM |
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| PLLD1.27-10A | KLS |
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| PLLD1.27-10A |
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