SI2301BDS-T1-E3
P-Ch -20V -2,4A 0,7W 0,1R
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 2.8A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2.2A |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Gate Charge (Qg) @ Vgs | 10nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 375pF @ 6V |
| Power - Max | 700mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 (TO-236) |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
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492.00 | ||||||
| C8051F330-GMR | SILICON LABS |
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| C8051F330-GMR | Silicon Laboratories Inc |
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| C8051F330-GMR | 4-7 НЕДЕЛЬ | 588 |
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