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Версия для печати
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Серия | HEXFET® |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 175 mOhm @ 6.6A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 19nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 350pF @ 25V |
| Power - Max | 38W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| FM24C64-GTR | RAMTRON |
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| FM24C64-GTR |
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242.00 | ||||||
| FM24C64-GTR | 4-7 НЕДЕЛЬ | 680 |
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| QT100A-ISG | ATMEL |
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| QT100A-ISG |
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245.20 | ||||||
| SI2301BDS-T1-E3 |
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P-Ch -20V -2,4A 0,7W 0,1R | VISHAY |
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| SI2301BDS-T1-E3 |
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P-Ch -20V -2,4A 0,7W 0,1R | SILICONIX |
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| SI2301BDS-T1-E3 |
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P-Ch -20V -2,4A 0,7W 0,1R |
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40.80 | ||||
| SI2301BDS-T1-E3 |
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P-Ch -20V -2,4A 0,7W 0,1R | SILICONIX | 2 087 |
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| SI2301BDS-T1-E3 |
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P-Ch -20V -2,4A 0,7W 0,1R | VISHAY | 1 588 |
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| SI2301BDS-T1-E3 |
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P-Ch -20V -2,4A 0,7W 0,1R | Vishay/Siliconix |
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| SI2302ADS-T1-E3 |
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N-Ch 20V 2,4A 0,57W 0,06R | VISHAY |
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| SI2302ADS-T1-E3 |
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N-Ch 20V 2,4A 0,57W 0,06R | SILICONIX |
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| SI2302ADS-T1-E3 |
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N-Ch 20V 2,4A 0,57W 0,06R |
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40.40 | ||||
| SI2302ADS-T1-E3 |
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N-Ch 20V 2,4A 0,57W 0,06R | SILICONIX |
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| SI2302ADS-T1-E3 |
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N-Ch 20V 2,4A 0,57W 0,06R | VISHAY |
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| SI2302ADS-T1-E3 |
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N-Ch 20V 2,4A 0,57W 0,06R | Vishay/Siliconix |
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