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Power - Max | 2W |
Input Capacitance (Ciss) @ Vds | 2940pF @ 15V |
Gate Charge (Qg) @ Vgs | 63nC @ 5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 9A |
Drain to Source Voltage (Vdss) | 20V |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 9A, 4.5V |
FET Feature | Logic Level Gate |
FET Type | 2 P-Channel (Dual) |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SO |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
0.125ВТ 0805 1 КОМ, 1% | ТАЙВАНЬ |
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0.125ВТ 0805 100 КОМ, 1% | ТАЙВАНЬ |
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IRF7324 |
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Hexfet power mosfets dual p-channel | INTERNATIONAL RECTIFIER | 8 | 98.28 | |
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IRF7324 |
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Hexfet power mosfets dual p-channel | 18 | 166.32 | ||
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IRF7324 |
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Hexfet power mosfets dual p-channel | INTERNATIONAL RECTIFIER | 2 |
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IRF7324 |
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Hexfet power mosfets dual p-channel | INFINEON |
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IRF7324 |
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Hexfet power mosfets dual p-channel | 1 |
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LM5110-1M/NOPB | NSC |
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LM5110-1M/NOPB | National Semiconductor |
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LM5110-1M/NOPB | NATIONAL SEMICONDUCTOR |
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LM5110-1M/NOPB | TEXAS |
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LM5110-1M/NOPB |
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LM5110-2M/NOPB |
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National Semiconductor |
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LM5110-2M/NOPB |
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TEXAS |
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LM5110-2M/NOPB |
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Корзина
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