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Версия для печати
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Current - Continuous Drain (Id) @ 25° C | 35A |
| Drain to Source Voltage (Vdss) | 150V |
| Rds On (Max) @ Id, Vgs | 39 mOhm @ 21A, 10V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1750pF @ 50V |
| Power - Max | 144W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| CC0603KRX7R0BB103 |
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Керамический конденсатор 0.01 мкФ 100 В | YAGEO | 114 168 |
0.90 >1000 шт. 0.18 |
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| CC0603KRX7R0BB103 |
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Керамический конденсатор 0.01 мкФ 100 В |
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| EFUSE LP16-1000F | WAYON |
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| EFUSE LP16-1000F | США |
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| EFUSE LP16-1000F | СОЕДИНЕННЫЕ ШТА |
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| EFUSE LP16-1000F |
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| EZV-B35-22МКФM5Х5.5 | HITANO |
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MMBT5551LT1G | ON SEMICONDUCTOR | 8 | 1.68 | ||||
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MMBT5551LT1G | ONS |
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MMBT5551LT1G | ON SEMICONDUCTOR | 5 108 |
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MMBT5551LT1G | 160 | 1.10 | |||||
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MMBT5551LT1G | ON SEMICONDUCTO |
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MMBT5551LT1G | ONSEMICONDUCTOR |
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MMBT5551LT1G | SEMTECH |
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MMBT5551LT1G | 10 |
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| MURS160 | VISHAY |
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| MURS160 | 18 000 | 2.57 | ||||||
| MURS160 | EIC |
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| MURS160 | GALAXY | 13 078 | 5.08 | |||||
| MURS160 | КИТАЙ |
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| MURS160 | LITE-ON SEMICONDUCTOR CORP | 9 000 |
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| MURS160 | GALAXY ME |
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| MURS160 | HOTTECH | 45 430 | 4.57 | |||||
| MURS160 | KLS |
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| MURS160 | LGE |
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| MURS160 | JANGJIE |
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| MURS160 | YJ | 19 316 | 3.32 | |||||
| MURS160 | SUNTAN | 2 927 | 2.18 | |||||
| MURS160 | KEXIN | 3 696 | 2.90 | |||||
| MURS160 | KEEN SIDE | 8 153 | 2.59 |