BAS21HT1G
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Версия для печати
| Current - Average Rectified (Io) | 200mA (DC) |
| Voltage - DC Reverse (Vr) (Max) | 250V |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 200mA |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Current - Reverse Leakage @ Vr | 100nA @ 200V |
| Diode Type | Standard |
| Скорость | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 50ns |
| Capacitance @ Vr, F | 5pF @ 0V, 1MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | SC-76, SOD-323 |
| Корпус | SOD-323 |
| Product Change Notification | Wire Change 08/Jun/2009 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| BAS16XV2T1G | ON SEMICONDUCTOR | 370 | 16.44 | |||||
| BAS16XV2T1G | ON SEMICONDUCTOR | 540 |
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| BAS16XV2T1G | ONS | 16 802 | 5.01 | |||||
| BAS16XV2T1G | ONSEMICONDUCTOR |
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| BAS16XV2T1G |
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| BSS138LT1G | ONS | 28 708 | 8.57 | |||||
| BSS138LT1G | ON SEMICONDUCTOR | 77 | 5.61 | |||||
| BSS138LT1G | ON SEMICONDUCTOR | 553 |
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| BSS138LT1G | 23 600 | 3.65 | ||||||
| BSS138LT1G | ON SEMICONDUCTO |
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| BSS138LT1G | LRC |
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| BSS138LT1G | VBSEMI |
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| BSS138LT1G | JSMICRO | 21 334 |
1.88 >100 шт. 0.94 |
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| IRFL110TRPBF | VISHAY | 10 782 | 46.25 | |||||
| IRFL110TRPBF | SILICONIX |
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| IRFL110TRPBF | SILICONIX | 245 |
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| IRFL110TRPBF | Vishay/Siliconix |
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| IRFL110TRPBF | VISHAY/IR |
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| IRFL110TRPBF | INTERNATIONAL RECTIFIER | 32 |
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| IRFL110TRPBF | INTERNATIONAL RECTIFIER |
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| IRFL110TRPBF |
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| IRFL110TRPBF | INFINEON |
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| L-1387QMP/1EGW | KGB |
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| L-1387QMP/1EGW | KB | 61 | 89.23 | |||||
| L-1387QMP/1EGW | KINGBRIGHT |
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| L-1387QMP/1EGW |
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| PLLD1.27-10A | KLS |
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| PLLD1.27-10A |
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