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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | PowerTrench® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 2A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2A |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) @ Vgs | 6.3nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 423pF @ 10V |
| Power - Max | 460mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | 3-SSOT |
| Product Change Notification | Mold Compound Change 07/Dec/2007 Mold Compound Change 08/April/2008 |
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FDN327N (MOSFET) N-Channel 1.8 Vgs Specified PowerTrench MOSFET
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 2SJ598 |
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P-MOS 60V, 12A, 23W | NEC |
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| 2SJ598 |
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P-MOS 60V, 12A, 23W |
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127.60 | ||||
| MC14515BDWR2G | ON SEMICONDUCTOR |
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| MC14515BDWR2G | ONS |
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| MC14515BDWR2G |
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| MC14515BDWR2G | ONSEMICONDUCTOR |
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| MC14515BDWR2G | 4-7 НЕДЕЛЬ | 593 |
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| NTD20P06LT4G | ON SEMICONDUCTOR |
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| NTD20P06LT4G | ONS |
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| NTD20P06LT4G |
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| NTD20P06LT4G | ON SEMICONDUCTOR |
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| NTD20P06LT4G | ON SEMICONDUCTO |
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STN3PF06 |
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Транзистор | ST MICROELECTRONICS |
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STN3PF06 |
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Транзистор | ST MICROELECTRONICS SEMI |
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STN3PF06 |
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Транзистор | STMicroelectronics |
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STN3PF06 |
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Транзистор |
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STN3PF06 |
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Транзистор |
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STN3PF06 |
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Транзистор | ST MICROELECTRO |
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| T491C336K016AT | KEMET |
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| T491C336K016AT |
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| T491C336K016AT | МЕКСИКА |
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| T491C336K016AT | KEMET |
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| T491C336K016AT | KEM |
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