|
MOSFET P-CH -60V -26A TO-252 |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 20A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 26A |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 54nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3600pF @ 30V |
| Power - Max | 60W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | TO-252, (D-Pak) |
|
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 2SJ598 |
|
P-MOS 60V, 12A, 23W | NEC |
|
|
|||
| 2SJ598 |
|
P-MOS 60V, 12A, 23W |
|
127.60 | ||||
| FDN5618P | FAIR |
|
|
|||||
| FDN5618P | FSC |
|
|
|||||
| FDN5618P | FAIRCHILD |
|
|
|||||
| FDN5618P | FAIRCHILD | 24 |
|
|||||
| FDN5618P | Fairchild Semiconductor |
|
|
|||||
| FDN5618P | 6 640 | 8.57 | ||||||
| FDN5618P | МАЛАЙЗИЯ |
|
|
|||||
| FDN5618P | ONS |
|
|
|||||
| FDN5618P | ONS-FAIR |
|
|
|||||
| FDN5618P | ON SEMICONDUCTOR |
|
|
|||||
|
|
IRF7401TRPBF |
|
N-канальный 20В 8.7А | INTERNATIONAL RECTIFIER |
|
|
||
|
|
IRF7401TRPBF |
|
N-канальный 20В 8.7А | INTERNATIONAL RECTIFIER |
|
|
||
|
|
IRF7401TRPBF |
|
N-канальный 20В 8.7А | INFINEON | 48 | 61.38 | ||
|
|
IRF7401TRPBF |
|
N-канальный 20В 8.7А | 4 |
|
|||
|
|
IRF7401TRPBF |
|
N-канальный 20В 8.7А | KLS |
|
|
||
|
|
IRF7401TRPBF |
|
N-канальный 20В 8.7А | КИТАЙ | 168 | 72.32 | ||
| IRF7493TRPBF | INTERNATIONAL RECTIFIER |
|
|
|||||
| IRF7493TRPBF | INTERNATIONAL RECTIFIER | 463 |
|
|||||
| IRF7493TRPBF | INFINEON |
|
|
|||||
| NTD20P06LT4G | ON SEMICONDUCTOR |
|
|
|||||
| NTD20P06LT4G | ONS |
|
|
|||||
| NTD20P06LT4G |
|
|
||||||
| NTD20P06LT4G | ON SEMICONDUCTOR |
|
|
|||||
| NTD20P06LT4G | ON SEMICONDUCTO |
|
|