Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 400V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
Current - Collector Cutoff (Max) | 200µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
Power - Max | 1.56W |
Frequency - Transition | 10MHz |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | DPAK-3 |
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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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AOZ1031AI |
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Alpha & Omega Semiconductor Inc
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AOZ1031AI |
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AOZ1031AI |
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A&O
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AOZ1031AI |
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AOZ1031AI |
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4-7 НЕДЕЛЬ
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652
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BD436 |
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Транзистор биполярный средней мощности PNP 32V, 4A, 36W
|
ST MICROELECTRONICS
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BD436 |
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Транзистор биполярный средней мощности PNP 32V, 4A, 36W
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ON SEMICONDUCTOR
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BD436 |
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Транзистор биполярный средней мощности PNP 32V, 4A, 36W
|
|
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37.24
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|
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BD436 |
|
Транзистор биполярный средней мощности PNP 32V, 4A, 36W
|
ON SEMICONDUCTOR
|
8 363
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BD436 |
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Транзистор биполярный средней мощности PNP 32V, 4A, 36W
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STMicroelectronics
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BD436 |
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Транзистор биполярный средней мощности PNP 32V, 4A, 36W
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FSC
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BD436 |
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Транзистор биполярный средней мощности PNP 32V, 4A, 36W
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ONS
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IRFL210PBF |
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Силовой МОП-Транзистор N-кан Vси = 200В, Rоткр = 1.5Ом, Id(25°C) = 0.96A
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VISHAY
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IRFL210PBF |
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Силовой МОП-Транзистор N-кан Vси = 200В, Rоткр = 1.5Ом, Id(25°C) = 0.96A
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Vishay/Siliconix
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IRFL210PBF |
|
Силовой МОП-Транзистор N-кан Vси = 200В, Rоткр = 1.5Ом, Id(25°C) = 0.96A
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INTERNATIONAL RECTIFIER
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IRFL210PBF |
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Силовой МОП-Транзистор N-кан Vси = 200В, Rоткр = 1.5Ом, Id(25°C) = 0.96A
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MJD122T4 |
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ST MICROELECTRONICS
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1 269
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50.46
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MJD122T4 |
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ON SEMICONDUCTOR
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MJD122T4 |
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MOTOROLA
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MJD122T4 |
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1 434
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46.27
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MJD122T4 |
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ST MICROELECTRONICS SEMI
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29
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MJD122T4 |
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STMicroelectronics
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15 992
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60.54
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MJD122T4 |
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ST MICROELECTRO
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MJD122T4 |
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<>
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SM6T36A |
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ST MICROELECTRONICS
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19 446
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14.59
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SM6T36A |
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SM6T36A |
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ST MICROELECTRONICS SEMI
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758
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SM6T36A |
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STMicroelectronics
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SM6T36A |
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КИТАЙ
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SM6T36A |
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SM6T36A |
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HOTTECH
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8 921
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10.02
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SM6T36A |
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1
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