SPW35N60C3
|
|
Версия для печати
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | CoolMOS™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 21.9A, 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 34.6A |
| Vgs(th) (Max) @ Id | 3.9V @ 1.9mA |
| Gate Charge (Qg) @ Vgs | 200nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 4500pF @ 25V |
| Power - Max | 313W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-247-3 |
| Корпус | PG-TO247-3 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
|
SPW35N60C3 Coolmos Power Transistor
Производитель:
|
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
 |
 |
FDP18N50 |
|
500v n-channel mosfet | FSC |
|
|
|
|
|
|
FDP18N50 |
|
500v n-channel mosfet | FAIR |
|
|
|
|
|
|
FDP18N50 |
|
500v n-channel mosfet | Fairchild Semiconductor |
|
|
|
|
|
|
FDP18N50 |
|
500v n-channel mosfet | FAIRCHILD |
|
|
|
|
|
|
FDP18N50 |
|
500v n-channel mosfet | FSC1 |
|
|
|
|
|
|
FDP18N50 |
|
500v n-channel mosfet |
|
|
||
|
|
|
FDP18N50 |
|
500v n-channel mosfet | ONS |
|
|
|
|
|
|
FDP18N50 |
|
500v n-channel mosfet | ON SEMICONDUCTOR |
|
|
|
 |
|
GBU1006 |
|
Diodes Inc |
|
|
||
|
|
|
GBU1006 |
|
DI |
|
|
||
|
|
|
GBU1006 |
|
DIODES INC. | 102 |
|
||
|
|
|
GBU1006 |
|
1 055 | 19.76 | |||
|
|
|
GBU1006 |
|
DIODES | 8 | 164.44 | ||
| ICE2PCS02G | INFINEON | 388 | 81.75 | |||||
| ICE2PCS02G | Infineon Technologies |
|
|
|||||
| ICE2PCS02G |
|
|
||||||
| ICE2PCS02G |
|
|
||||||
| ICE2PCS02G | 4-7 НЕДЕЛЬ | 145 |
|
|||||
|
|
SPA17N80C3 | INFINEON |
|
|
||||
|
|
SPA17N80C3 | Infineon Technologies |
|
|
||||
|
|
SPA17N80C3 |
|
|
|||||
|
|
SPA17N80C3 | INFINEON |
|
|
||||
| VS-80EPF06 | VISHAY |
|
|
