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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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APL431BAI-TR |
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ANPEC ELECTRONICS
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APL431BAI-TR |
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ANPEC ELECTRONICS
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IRG4PF50WD |
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Транзистор IGBT модуль единичный 900V, 28A, 200W (WARP 60-150kHz)
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INTERNATIONAL RECTIFIER
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IRG4PF50WD |
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Транзистор IGBT модуль единичный 900V, 28A, 200W (WARP 60-150kHz)
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468.40
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IRG4PF50WD |
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Транзистор IGBT модуль единичный 900V, 28A, 200W (WARP 60-150kHz)
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МЕКСИКА
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IRG4PF50WD |
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Транзистор IGBT модуль единичный 900V, 28A, 200W (WARP 60-150kHz)
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INFINEON
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SGP15N120 |
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IGBT транзистор 1200В, 30А, 198Вт
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Infineon Technologies
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SGP15N120 |
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IGBT транзистор 1200В, 30А, 198Вт
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INFINEON
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SGP15N120 |
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IGBT транзистор 1200В, 30А, 198Вт
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STW9N150 |
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N-channel 1500 v - 1.8 ? - 8 a - to-247 very high voltage powermesh™ power mosfet
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ST MICROELECTRONICS
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STW9N150 |
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N-channel 1500 v - 1.8 ? - 8 a - to-247 very high voltage powermesh™ power mosfet
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STMicroelectronics
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STW9N150 |
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N-channel 1500 v - 1.8 ? - 8 a - to-247 very high voltage powermesh™ power mosfet
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65
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293.42
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STW9N150 |
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N-channel 1500 v - 1.8 ? - 8 a - to-247 very high voltage powermesh™ power mosfet
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65
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293.42
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STW9N150 |
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N-channel 1500 v - 1.8 ? - 8 a - to-247 very high voltage powermesh™ power mosfet
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ST MICROELECTRO
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STW9N150 |
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N-channel 1500 v - 1.8 ? - 8 a - to-247 very high voltage powermesh™ power mosfet
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ST MICROELECTRONICS SEMI
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1 200
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К1156ЕУ2АТ |
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480.00
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К1156ЕУ2АТ |
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НТЦ СИТ
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К1156ЕУ2АТ |
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СИТ
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28
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756.00
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К1156ЕУ2АТ |
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НТЦ
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К1156ЕУ2АТ |
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БРЯНСК
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343
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1 113.00
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К1156ЕУ2АТ |
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КРЕМНИЙ
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8
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917.44
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