MMBF4392LT1G
N-канальный (Vgs=30V, Igf=50mA, P=225mW, T=-55 to +150C)
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Current - Drain (Idss) @ Vds (Vgs=0) | 25mA @ 15V |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 30V |
| Voltage - Cutoff (VGS off) @ Id | 2V @ 10nA |
| Input Capacitance (Ciss) @ Vds | 14pF @ 15V |
| Resistance - RDS(On) | 60 Ohm |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
| Power - Max | 225mW |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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