PMBFJ309,215
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JFET N-CH 25V 30MA SOT23 |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Current - Drain (Idss) @ Vds (Vgs=0) | 12mA @ 10V |
| Drain to Source Voltage (Vdss) | 25V |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 25V |
| Voltage - Cutoff (VGS off) @ Id | 1V @ 1µA |
| Input Capacitance (Ciss) @ Vds | 5pF @ 10V |
| Resistance - RDS(On) | 50 Ohm |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | TO-236AB |
| Power - Max | 250mW |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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LM317LBZ | NATIONAL SEMICONDUCTOR |
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LM317LBZ | UTC |
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LM317LBZ |
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150.40 | |||||
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LM317LBZ | ONS-FAIR |
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LM317LBZ | ONS |
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LM317LBZ | ONSEMI |
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LM317LBZ | 4-7 НЕДЕЛЬ | 715 |
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LM337LZ | NATIONAL SEMICONDUCTOR |
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LM337LZ |
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47.44 | ||||
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LM337LZ | NSC |
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LM337LZ | NATIONAL SEMICONDUCTOR |
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LM337LZ | ВЕЛИКОБРИТАНИЯ |
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LM337LZ | TEXAS INSTRUMENTS |
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LM337LZ | NS |
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LM337LZ | TEXAS |
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LM337LZ | 4-7 НЕДЕЛЬ | 143 |
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| MMBF4392LT1G |
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N-канальный (Vgs=30V, Igf=50mA, P=225mW, T=-55 to +150C) | ON SEMICONDUCTOR |
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| MMBF4392LT1G |
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N-канальный (Vgs=30V, Igf=50mA, P=225mW, T=-55 to +150C) |
|
88.40 | ||||
| MMBF4392LT1G |
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N-канальный (Vgs=30V, Igf=50mA, P=225mW, T=-55 to +150C) | ON SEMICONDUCTOR |
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| MMBF4392LT1G |
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N-канальный (Vgs=30V, Igf=50mA, P=225mW, T=-55 to +150C) | ONS |
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| NCP301LSN30T1G | ONS |
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| NCP301LSN30T1G | ON Semiconductor |
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| NCP301LSN30T1G | ON SEMICONDUCTOR | 14 |
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| NCP301LSN30T1G |
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| NCP301LSN30T1G | 4-7 НЕДЕЛЬ | 662 |
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NCP803SN293T1G |
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ON Semiconductor |
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NCP803SN293T1G |
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ONS |
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NCP803SN293T1G |
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ON SEMICONDUCTOR |
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NCP803SN293T1G |
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NCP803SN293T1G |
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4-7 НЕДЕЛЬ | 173 |
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