| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 50mA |
| Current - Reverse Leakage @ Vr | 50nA @ 20V |
| Current - Average Rectified (Io) (per Diode) | 50mA |
| Voltage - DC Reverse (Vr) (Max) | 30V |
| Reverse Recovery Time (trr) | 1ns |
| Diode Type | Standard |
| Скорость | Small Signal =< 200mA (Io), Any Speed |
| Diode Configuration | 1 Pair Series Connection |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 (TO-236) |
| Product Change Notification | Mold Compound Change 12/Dec/2007 |
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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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1N5400 |
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Диод 3А, 50В
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MICRO SEMICONDUCTOR
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1N5400 |
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Диод 3А, 50В
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DIODES
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1N5400 |
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Диод 3А, 50В
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FAIR
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1N5400 |
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Диод 3А, 50В
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GENERAL SEMICONDUCTOR
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1N5400 |
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Диод 3А, 50В
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LITE ON OPTOELECTRONICS
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1N5400 |
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Диод 3А, 50В
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MSIS
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1N5400 |
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Диод 3А, 50В
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ON SEMICONDUCTOR
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1N5400 |
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Диод 3А, 50В
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TAITRON COMPONENTS
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1N5400 |
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Диод 3А, 50В
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DC COMPONENTS
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3 745
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5.18
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1N5400 |
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Диод 3А, 50В
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SMK
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1N5400 |
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Диод 3А, 50В
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FAIRCHILD
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140
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6.36
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1N5400 |
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Диод 3А, 50В
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FAIRCHILD
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1N5400 |
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Диод 3А, 50В
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GENERAL SEMICONDUCTOR
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1N5400 |
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Диод 3А, 50В
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LITE ON OPTOELECTRONICS
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1N5400 |
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Диод 3А, 50В
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MICRO SEMICONDUCTOR(MICROSEMI)
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1N5400 |
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Диод 3А, 50В
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MSIS SEMICONDUCTOR
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1N5400 |
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Диод 3А, 50В
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TAITRON COMPONENTS
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1N5400 |
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Диод 3А, 50В
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Fairchild Semiconductor
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1N5400 |
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Диод 3А, 50В
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MICROSEMI CORP
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1N5400 |
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Диод 3А, 50В
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ТАЙВАНЬ(КИТАЙ)
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1N5400 |
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Диод 3А, 50В
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MOTOROLA
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121
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1N5400 |
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Диод 3А, 50В
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КИТАЙ
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1N5400 |
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Диод 3А, 50В
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KINGTRONICS
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1N5400 |
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Диод 3А, 50В
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DIOTEC
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2 720
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9.37
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1N5400 |
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Диод 3А, 50В
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12
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15.12
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1N5400 |
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Диод 3А, 50В
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MIC
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1N5400 |
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Диод 3А, 50В
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SEMTECH
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1N5400 |
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Диод 3А, 50В
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SUNTAN
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1 206
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6.19
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1N5400 |
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Диод 3А, 50В
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KLS
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1N5400 |
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Диод 3А, 50В
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1
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1N5400 |
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Диод 3А, 50В
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KEEN SIDE
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6 970
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1.73
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2KBP06M |
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Диодный мост (V=600В, I=2.0А, Vf=1.1V@I=3.14A, Rm=3.8mm, -55 to +125C), однорядный)
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FAIR
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2KBP06M |
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Диодный мост (V=600В, I=2.0А, Vf=1.1V@I=3.14A, Rm=3.8mm, -55 to +125C), однорядный)
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GENERAL SEMICONDUCTOR
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2KBP06M |
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Диодный мост (V=600В, I=2.0А, Vf=1.1V@I=3.14A, Rm=3.8mm, -55 to +125C), однорядный)
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32
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165.08
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2KBP06M |
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Диодный мост (V=600В, I=2.0А, Vf=1.1V@I=3.14A, Rm=3.8mm, -55 to +125C), однорядный)
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GENERAL SEMICONDUCTOR
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2KBP06M |
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Диодный мост (V=600В, I=2.0А, Vf=1.1V@I=3.14A, Rm=3.8mm, -55 to +125C), однорядный)
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Fairchild Semiconductor
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2KBP06M |
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Диодный мост (V=600В, I=2.0А, Vf=1.1V@I=3.14A, Rm=3.8mm, -55 to +125C), однорядный)
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VISHAY
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2KBP06M |
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Диодный мост (V=600В, I=2.0А, Vf=1.1V@I=3.14A, Rm=3.8mm, -55 to +125C), однорядный)
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PANJIT
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36
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2KBP06M |
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Диодный мост (V=600В, I=2.0А, Vf=1.1V@I=3.14A, Rm=3.8mm, -55 to +125C), однорядный)
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FSC
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2KBP06M |
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Диодный мост (V=600В, I=2.0А, Vf=1.1V@I=3.14A, Rm=3.8mm, -55 to +125C), однорядный)
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ONS
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IRLR024N |
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Транзистор полевой SMD N-MOS 55V, 17A, 45W (Logic-Level)
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INTERNATIONAL RECTIFIER
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400
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63.24
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IRLR024N |
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Транзистор полевой SMD N-MOS 55V, 17A, 45W (Logic-Level)
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248
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44.40
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IRLR024N |
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Транзистор полевой SMD N-MOS 55V, 17A, 45W (Logic-Level)
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INTERNATIONAL RECTIFIER
|
2
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IRLR024N |
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Транзистор полевой SMD N-MOS 55V, 17A, 45W (Logic-Level)
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МЕКСИКА
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IRLR024N |
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Транзистор полевой SMD N-MOS 55V, 17A, 45W (Logic-Level)
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INFINEON
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STPR1610CT |
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SGS
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STPR1610CT |
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SGS THOMSON
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TLP751 |
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TOSHIBA
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