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Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 10A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 17A |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 15nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 480pF @ 25V |
| Power - Max | 45W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |
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IRLR024NPBF Hexfet Power Mosfet
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| MB1S | FAIR |
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| MB1S | FAIRCHILD |
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| MB1S | FAIRCHILD | 1 666 |
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| MB1S | 5 638 | 1.44 | ||||||
| MB1S | Fairchild Semiconductor |
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| MB1S | ТАЙВАНЬ(КИТАЙ) |
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| MB1S | YJ | 11 169 | 2.69 | |||||
| MB1S | KINGTRONICS |
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| MB1S | FSC |
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| MB1S | ONS |
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| MB1S | ONS-FAIR |
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| MB1S | SONITRON | 54 | 37.30 | |||||
| MB1S | YANGJIE (YJ) |
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| MB1S | SEP | 1 348 | 1.62 | |||||
| MB1S | HOTTECH | 1 910 |
1.88 >100 шт. 0.94 |
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| MB1S | TOSHIBA | 3 188 | 1.46 | |||||
| MB1S | CJ | 792 | 2.30 | |||||
| MB1S | YANGZHOU YANGJIE |
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| RC0805JR-071KL | 2 192 | 2.10 | ||||||
| RC0805JR-071KL | YAGEO | 1 265 080 |
1.00 >1000 шт. 0.20 |
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| RC0805JR-071KL | YAGEO |
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| RC0805JR-071KL | PHYCOMP |
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TDA8563AQ | PHILIPS |
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TDA8563AQ |
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321.32 | |||||
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TDA8563AQ | 4-7 НЕДЕЛЬ | 760 |
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| К50-35-25В-22МКФ |
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| ТОТ-35 |
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1 360.00 | ||||||
| ТОТ-35 | ИЗУМРУД |
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| ТОТ-35 | СТАВРОПОЛЬ |
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| ТОТ-35 | РОССИЯ |
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