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MOSFET N-CH 40V 18A 8-SOIC |
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 5 mOhm @ 17A, 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Gate Charge (Qg) @ Vgs | 50nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 4500pF @ 20V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 227M025V 220UF 25V 20% E |
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CD4001BM96 | TEXAS INSTRUMENTS |
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CD4001BM96 | 4 | 34.02 | |||||
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CD4001BM96 | TEXAS |
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CD4001BM96 | 4-7 НЕДЕЛЬ | 671 |
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| CD4011BM |
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Стандартная логика QUAD 2-INPUT NAND GATE -55/+125 C | ST MICROELECTRONICS |
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| CD4011BM |
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Стандартная логика QUAD 2-INPUT NAND GATE -55/+125 C | TEXAS INSTRUMENTS |
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| CD4011BM |
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Стандартная логика QUAD 2-INPUT NAND GATE -55/+125 C |
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50.40 | ||||
| CD4011BM |
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Стандартная логика QUAD 2-INPUT NAND GATE -55/+125 C | TEXAS |
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| CD4011BM |
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Стандартная логика QUAD 2-INPUT NAND GATE -55/+125 C | TEXAS INSTRUMEN |
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| CD4011BM |
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Стандартная логика QUAD 2-INPUT NAND GATE -55/+125 C | 4-7 НЕДЕЛЬ | 36 |
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| EFM-810 | EAST |
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| EFM-810 | КИТАЙ |
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| EFM-810 |
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| MC14049BDR2G | ON SEMICONDUCTOR |
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| MC14049BDR2G | ONS |
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| MC14049BDR2G |
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17.96 | ||||||
| MC14049BDR2G | 4-7 НЕДЕЛЬ | 784 |
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