| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Current - Collector (Ic) (Max) | 500mA |
| Transistor Type | NPN |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Тип монтажа | Поверхностный |
| Frequency - Transition | 100MHz |
| Power - Max | 225mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 1V |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Корпус | SOT-23-3 |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| |
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
|
56 983
|
2.00
>100 шт. 1.00
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
PHILIPS
|
800
|
8.59
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
NXP
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
DIOTEC
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
INFINEON
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
MCC
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
DC COMPONENTS
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
GALAXY
|
3 409
|
1.89
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
OTHER
|
12 800
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
PHILIPS
|
1 424
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
ONS
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
КИТАЙ
|
8
|
1.50
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
NXP
|
7 139
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
YJ
|
246 596
|
1.90
>100 шт. 0.95
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
GALAXY ME
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
HOTTECH
|
20 628
|
2.07
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
LRC
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
KLS
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
PANJIT
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
SEMTECH
|
4
|
2.71
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
YANGJIE
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
YANGJIE (YJ)
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
YOUTAI
|
134 289
|
1.42
>100 шт. 0.71
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
|
8 073
|
1.84
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
ZH
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
ASEMI
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
TRR
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
YIXING
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
1
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
SUNTAN
|
491 200
|
1.03
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
SHIKUES
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
YANGZHOU YANGJIE
|
|
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
MERRYELC
|
1 600
|
1.03
|
|
|
|
BC807-40 |
|
Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
|
CTK
|
220
|
1.45
|
|
|
|
DB 25-F |
|
Гнездо 25 pin на кабель (пайка)
|
NELTON
|
|
|
|
|
|
DL4742A |
|
Стабилитрон SMD 1 Вт, 12 V
|
DC COMPONENTS
|
12 127
|
4.45
|
|
|
|
DL4742A |
|
Стабилитрон SMD 1 Вт, 12 V
|
|
14 725
|
1.84
|
|
|
|
DL4742A |
|
Стабилитрон SMD 1 Вт, 12 V
|
PANJIT
|
|
|
|
|
|
DL4742A |
|
Стабилитрон SMD 1 Вт, 12 V
|
PANJIT
|
|
|
|
|
|
DL4742A |
|
Стабилитрон SMD 1 Вт, 12 V
|
ТАЙВАНЬ(КИТАЙ)
|
|
|
|
|
|
DL4742A |
|
Стабилитрон SMD 1 Вт, 12 V
|
MIC
|
2 081
|
1.73
|
|
|
|
DL4742A |
|
Стабилитрон SMD 1 Вт, 12 V
|
MICRO COMMERCIAL COMPONENTS
|
|
|
|
|
|
DL4742A |
|
Стабилитрон SMD 1 Вт, 12 V
|
КИТАЙ
|
|
|
|
|
|
DL4742A |
|
Стабилитрон SMD 1 Вт, 12 V
|
HOTTECH
|
|
|
|
|
|
DL4742A |
|
Стабилитрон SMD 1 Вт, 12 V
|
KLS
|
|
|
|
|
|
DL4742A |
|
Стабилитрон SMD 1 Вт, 12 V
|
KOME
|
1 908
|
3.06
|
|
|
|
DL4742A |
|
Стабилитрон SMD 1 Вт, 12 V
|
1
|
|
|
|
|
|
DL4742A |
|
Стабилитрон SMD 1 Вт, 12 V
|
SUNTAN
|
1 370
|
2.68
|
|
|
|
DL4742A |
|
Стабилитрон SMD 1 Вт, 12 V
|
KEEN SIDE
|
7 178
|
1.48
|
|
|
|
|
DL4748A |
|
|
DC COMPONENTS
|
924
|
2.89
|
|
|
|
|
DL4748A |
|
|
PANJIT
|
6 292
|
3.54
|
|
|
|
|
DL4748A |
|
|
|
|
|
|
|
|
|
DL4748A |
|
|
PANJIT
|
3 636
|
|
|
|
|
|
DL4748A |
|
|
SEMTECH
|
1 034
|
3.54
|
|
|
|
|
DL4748A |
|
|
WUXI XUYANG
|
4 960
|
3.04
|
|
|
|
|
DL4748A |
|
|
0.00
|
|
|
|
|
|
HGTG30N60A4D |
|
Модуль IGBT 600V + диод 600В
|
FAIR
|
|
|
|
|
|
HGTG30N60A4D |
|
Модуль IGBT 600V + диод 600В
|
FSC
|
|
|
|
|
|
HGTG30N60A4D |
|
Модуль IGBT 600V + диод 600В
|
|
|
592.00
|
|
|
|
HGTG30N60A4D |
|
Модуль IGBT 600V + диод 600В
|
Fairchild Semiconductor
|
|
|
|
|
|
HGTG30N60A4D |
|
Модуль IGBT 600V + диод 600В
|
США
|
|
|
|
|
|
HGTG30N60A4D |
|
Модуль IGBT 600V + диод 600В
|
СОЕДИНЕННЫЕ ШТА
|
|
|
|
|
|
HGTG30N60A4D |
|
Модуль IGBT 600V + диод 600В
|
FAIRCHILD
|
|
|
|
|
|
HGTG30N60A4D |
|
Модуль IGBT 600V + диод 600В
|
FAIRCHILD
|
|
|
|
|
|
HGTG30N60A4D |
|
Модуль IGBT 600V + диод 600В
|
ONS-FAIR
|
|
|
|
|
|
HGTG30N60A4D |
|
Модуль IGBT 600V + диод 600В
|
ON SEMICONDUCTOR
|
|
|
|
|
|
HGTG30N60A4D |
|
Модуль IGBT 600V + диод 600В
|
ONS
|
|
|
|