| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 200V |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Power - Max | 1W |
| Frequency - Transition | 15MHz |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-205AD, TO-39-3 Metal Can |
| Корпус | TO-39 |
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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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2N3440 |
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Транзистор S-N, ВID/S (300В, 1A, TO5)
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84.00
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2N3440 |
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Транзистор S-N, ВID/S (300В, 1A, TO5)
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CDIL
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2N3440 |
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Транзистор S-N, ВID/S (300В, 1A, TO5)
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ST MICROELECTRONICS
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2N3440 |
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Транзистор S-N, ВID/S (300В, 1A, TO5)
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MOTOROLA
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2N3440 |
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Транзистор S-N, ВID/S (300В, 1A, TO5)
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MOT
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2N3440 |
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Транзистор S-N, ВID/S (300В, 1A, TO5)
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STMicroelectronics
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2N3440 |
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Транзистор S-N, ВID/S (300В, 1A, TO5)
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ST MICROELECTRONICS SEMI
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2N3440 |
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Транзистор S-N, ВID/S (300В, 1A, TO5)
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NTE
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2N3440 |
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Транзистор S-N, ВID/S (300В, 1A, TO5)
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ISC
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840
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15.09
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAI/QTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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800
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12.49
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NATIONAL SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NXP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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PHILIPS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DC COMPONENTS
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17 475
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3.64
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FSC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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UTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DIOTEC
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2 294
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4.24
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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МИНСК
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIRCHILD
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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OTHER
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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17 368
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1.07
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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---
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NO TRADEMARK
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MULTICOMP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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HOTTECH
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294
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1.44
>100 шт. 0.72
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KLS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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КИТАЙ
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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CHINA
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9 576
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1.22
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ZH
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ASEMI
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3 985
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1.10
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEEN SIDE
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1 363
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1.82
>100 шт. 0.91
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MERRYELC
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2 056
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1.34
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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RUME
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480
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1.58
>100 шт. 0.79
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B32529C1104K000 |
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Пленочный конденсатор 0.1 мкФ 100 В
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EPCOS
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B32529C1104K000 |
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Пленочный конденсатор 0.1 мкФ 100 В
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B32529C1104K000 |
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Пленочный конденсатор 0.1 мкФ 100 В
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TDK-EPC
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22 756
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4.18
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MJE15032 |
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Транзистор биполярный большой мощности S-N 250В 8A
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ON SEMICONDUCTOR
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8
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195.20
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MJE15032 |
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Транзистор биполярный большой мощности S-N 250В 8A
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65.76
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MJE15032 |
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Транзистор биполярный большой мощности S-N 250В 8A
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ON SEMICONDUCTOR
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MJE15032 |
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Транзистор биполярный большой мощности S-N 250В 8A
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ISC
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253
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39.57
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MJE15033 |
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Транзистор биполярный большой мощности PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C)
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ON SEMICONDUCTOR
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MJE15033 |
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Транзистор биполярный большой мощности PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C)
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74.04
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MJE15033 |
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Транзистор биполярный большой мощности PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C)
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ISC
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270
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37.95
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