MJE15032
Транзистор биполярный большой мощности S-N 250В 8A
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Версия для печати
| Voltage - Collector Emitter Breakdown (Max) | 250V |
| Current - Collector (Ic) (Max) | 8A |
| Transistor Type | NPN |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 2A, 5V |
| Power - Max | 2W |
| Frequency - Transition | 30MHz |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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MJE15032 (Мощные биполярные транзисторы) 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 58 260 | 1.36 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 329 104 | 1.47 | ||
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1N4007 |
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DIOTEC | 112 266 | 2.90 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 250 282 | 1.22 | ||
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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1N4007 |
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MICRO COMMERCIAL COMPONENTS |
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1N4007 |
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MOTOROLA |
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1N4007 |
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YJ ELE-NIC CORP |
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1N4007 |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 800 | 4.54 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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208 325 |
1.66 >100 шт. 0.83 |
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 23 251 | 1.03 | ||
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1N4007 |
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HOTTECH | 424 610 | 1.82 | ||
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1N4007 |
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KLS | 72 800 | 2.07 | ||
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1N4007 |
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YS |
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1N4007 |
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YANGJIE | 1 600 | 1.51 | ||
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1N4007 |
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YANGJIE (YJ) |
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1N4007 |
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MC |
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FAIRCHILD |
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WUXI XUYANG |
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1N4007 |
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KUU |
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1N4007 |
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CHINA | 14 461 | 1.09 | ||
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SUNRISETRON |
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1N4007 |
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UNKNOWN |
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1N4007 |
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BILIN |
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KEHE |
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1 |
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1N4007 |
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BL |
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1N4007 |
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SUNTAN | 84 645 | 1.89 | ||
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1N4007 |
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TWGMC | 33 363 |
1.41 >500 шт. 0.47 |
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1N4007 |
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CTK |
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1N4007 |
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JUXING | 93 | 2.03 | ||
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1N4007 |
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ASEMI | 6 414 | 1.10 | ||
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1N4007 |
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YANGZHOU YANGJIE | 4 939 | 3.63 | ||
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BZX55C10-VISHAY |
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Стабилитрон универсальный 40мA, 10В | VISHAY |
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MJE15033 |
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Транзистор биполярный большой мощности PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ON SEMICONDUCTOR |
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MJE15033 |
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Транзистор биполярный большой мощности PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) |
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74.04 | |||
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MJE15033 |
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Транзистор биполярный большой мощности PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ISC | 830 | 46.83 | ||
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ON SEMICONDUCTOR |
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) |
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144.00 | ||
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ONS | 487 | 133.51 | |
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ON SEMIC |
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ON SEMICONDUCTO |
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ONSEMICONDUCTOR |
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ONS-FAIR |
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | SPTECH | 772 | 35.60 | |
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | JSMICRO | 137 | 43.92 | |
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MJE15035G |
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ON Semiconductor |
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MJE15035G |
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ONS | 370 | 147.23 | ||
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MJE15035G |
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MJE15035G |
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ONSEMICONDUCTOR |
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MJE15035G |
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SPTECH | 162 | 52.72 |
