MJE15032
Транзистор биполярный большой мощности S-N 250В 8A
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Версия для печати
| Voltage - Collector Emitter Breakdown (Max) | 250V |
| Current - Collector (Ic) (Max) | 8A |
| Transistor Type | NPN |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 2A, 5V |
| Power - Max | 2W |
| Frequency - Transition | 30MHz |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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MJE15032 (Мощные биполярные транзисторы) 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS 50 WATTS
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 1 496 | 1.21 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 400 940 | 2.57 | ||
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1N4007 |
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DIOTEC | 59 708 | 3.29 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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QUAN-HONG |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 90 924 | 2.71 | ||
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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MICRO COMMERCIAL COMPONENTS |
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MOTOROLA |
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YJ ELE-NIC CORP |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 800 | 5.47 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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25 989 |
1.52 >100 шт. 0.76 |
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 22 | 1.70 | ||
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1N4007 |
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HOTTECH | 58 304 |
1.22 >100 шт. 0.61 |
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1N4007 |
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KLS |
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1N4007 |
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YS | 2 311 | 1.21 | ||
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1N4007 |
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YANGJIE | 44 896 | 1.58 | ||
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1N4007 |
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YANGJIE (YJ) |
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1N4007 |
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MC |
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FAIRCHILD | 616 | 1.21 | ||
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WUXI XUYANG |
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KUU |
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CHINA |
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SUNRISETRON |
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UNKNOWN |
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1N4007 |
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BILIN |
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KEHE |
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1 |
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BL |
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SUNTAN | 12 421 | 1.31 | ||
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1N4007 |
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TWGMC | 76 601 | 1.14 | ||
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1N4007 |
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CTK |
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1N4007 |
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JUXING |
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1N4007 |
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ASEMI |
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1N4007 |
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YANGZHOU YANGJIE |
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1N4007 |
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KEEN SIDE | 262 596 |
1.22 >100 шт. 0.61 |
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1N4007 |
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MERRYELC |
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1N4007 |
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82582 |
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1N4007 |
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81682 |
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1N4007 |
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TRR | 389 903 |
1.38 >100 шт. 0.69 |
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1N4007 |
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71682 |
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BZX55C10-VISHAY |
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Стабилитрон универсальный 40мA, 10В | VISHAY |
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MJE15033 |
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Транзистор биполярный большой мощности PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ON SEMICONDUCTOR |
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MJE15033 |
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Транзистор биполярный большой мощности PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) |
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74.04 | |||
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MJE15033 |
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Транзистор биполярный большой мощности PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ISC | 140 | 51.32 | ||
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ON SEMICONDUCTOR |
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) |
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144.00 | ||
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ONS | 88 | 217.87 | |
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ON SEMIC |
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ON SEMICONDUCTO |
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ONSEMICONDUCTOR |
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | ONS-FAIR |
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | SPTECH | 631 | 75.31 | |
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MJE15033G |
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Транзистор PNP (Uce=250V, Ic=16A, Pd=50W, t= -65 to +150C) | JSMICRO |
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MJE15035G |
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ON Semiconductor |
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MJE15035G |
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ONS |
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MJE15035G |
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MJE15035G |
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ONSEMICONDUCTOR |
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MJE15035G |
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SPTECH | 4 | 60.05 |
