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Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | HEXFET® |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 75A, 10V |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 120A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 210nC @ 10V |
Input Capacitance (Ciss) @ Vds | 9620pF @ 50V |
Power - Max | 370W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 |
Корпус | TO-220AB |
IRFB4110PBF (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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FM24V10-GTR | RAMTRON |
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FM24V10-GTR | CYPR |
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FM24V10-GTR | CYPRESS |
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FM24V10-GTR | CYP |
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FM24V10-GTR | 300 | 444.47 | ||||||
FM24V10-GTR | CYPRESS |
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FM24V10-GTR | INFINEON | 1 033 | 499.71 | |||||
FM24V10-GTR | 4-7 НЕДЕЛЬ | 790 |
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LMV321ILT | ST MICROELECTRONICS | 23 993 | 21.93 | |||||
LMV321ILT | STMicroelectronics |
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LMV321ILT |
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LMV321ILT | ST MICROELECTRONICS SEMI | 228 |
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LMV321ILT | TECH PUB | 10 052 | 7.43 | |||||
LMV321ILT | 4-7 НЕДЕЛЬ | 208 |
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SK16 |
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Диод | DC COMPONENTS | 7 452 | 3.71 | |
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SK16 |
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Диод | SMK |
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SK16 |
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Диод | DIOTEC | 19 886 | 5.08 | |
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SK16 |
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Диод | DIODES |
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SK16 |
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Диод | DIOTEC SEMICONDUCTOR |
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SK16 |
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Диод | DIODES INC. |
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SK16 |
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Диод | DIOTEC SEMICONDUCTOR |
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SK16 |
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Диод | SEMICRON |
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SK16 |
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Диод | КИТАЙ |
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SK16 |
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Диод | 20 000 | 1.36 | ||
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SN74LVC1G3157DBVR | TEXAS INSTRUMENTS | 40 | 14.31 | ||||
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SN74LVC1G3157DBVR | TEXAS INSTRUMENTS |
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SN74LVC1G3157DBVR | 9 064 | 5.42 | |||||
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SN74LVC1G3157DBVR | TEXAS | 25 200 | 8.35 | ||||
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SN74LVC1G3157DBVR | TEXAS INSTRUMEN |
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SN74LVC1G3157DBVR | YOUTAI | 47 484 | 4.02 | ||||
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SN74LVC1G3157DBVR | UMW-YOUTAI |
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SN74LVC1G3157DBVR | 4-7 НЕДЕЛЬ | 169 |
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TECAP 22/16V B 20 (TCSCS1C226MBAR) | SAMSUNG | 658 | 10.50 |
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Корзина
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