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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 75A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 120A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 210nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 9620pF @ 50V |
| Power - Max | 370W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
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IRFB4110PBF (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| FM24V10-GTR | RAMTRON |
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| FM24V10-GTR | CYPR |
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| FM24V10-GTR | CYPRESS |
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| FM24V10-GTR | CYP |
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| FM24V10-GTR | 261 | 451.87 | ||||||
| FM24V10-GTR | CYPRESS |
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| FM24V10-GTR | INFINEON |
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| FM24V10-GTR | 4-7 НЕДЕЛЬ | 790 |
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| LMV321ILT | ST MICROELECTRONICS | 10 | 32.87 | |||||
| LMV321ILT | STMicroelectronics |
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| LMV321ILT |
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| LMV321ILT | ST MICROELECTRONICS SEMI | 228 |
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| LMV321ILT | TECH PUB | 325 | 6.33 | |||||
| LMV321ILT | 4-7 НЕДЕЛЬ | 208 |
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Диод | DC COMPONENTS | 1 800 | 2.56 | |
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Диод | SMK |
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Диод | DIOTEC | 2 580 | 1.78 | |
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Диод | DIODES |
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Диод | DIOTEC SEMICONDUCTOR |
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Диод | DIODES INC. |
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Диод | DIOTEC SEMICONDUCTOR |
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Диод | SEMICRON |
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Диод | КИТАЙ |
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Диод | 20 000 | 1.39 | ||
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SN74LVC1G3157DBVR | TEXAS INSTRUMENTS | 40 | 14.13 | ||||
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SN74LVC1G3157DBVR | TEXAS INSTRUMENTS |
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SN74LVC1G3157DBVR | 10 864 | 4.73 | |||||
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SN74LVC1G3157DBVR | TEXAS |
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SN74LVC1G3157DBVR | TEXAS INSTRUMEN |
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SN74LVC1G3157DBVR | YOUTAI | 23 155 | 3.38 | ||||
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SN74LVC1G3157DBVR | UMW-YOUTAI |
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SN74LVC1G3157DBVR | 4-7 НЕДЕЛЬ | 169 |
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SN74LVC1G3157DBVR | 30 |
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| TECAP 22/16V B 20 (TCSCS1C226MBAR) | SAMSUNG | 557 | 10.60 |