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Версия для печати
| Gate Charge (Qg) @ Vgs | 18.3nC @ 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 2.8A |
| Drain to Source Voltage (Vdss) | 55V |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 2.8A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 400pF @ 25V |
| Power - Max | 1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 0603-NPO-50V- 1.0NF (1000PF) 5% 0603N102J500CT | WALSIN |
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| 1206-X7R-100V- 2.2UF 10% CS3216X7R225K101NRI | SAMWHA |
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| 1206-X7R-2000V- 1000PF 10% 1206B102K202CT | WALSIN |
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| IRFR9024NTRPBF | INTERNATIONAL RECTIFIER | 222 | 19.13 | |||||
| IRFR9024NTRPBF | INTERNATIONAL RECTIFIER | 4 |
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| IRFR9024NTRPBF | INFINEON | 1 920 | 22.73 | |||||
| IRFR9024NTRPBF | 6 |
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| TECAP 22/16V B 20 (TCSCS1C226MBAR) | SAMSUNG | 437 | 8.95 |