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Версия для печати
| Gate Charge (Qg) @ Vgs | 18.3nC @ 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 2.8A |
| Drain to Source Voltage (Vdss) | 55V |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 2.8A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 400pF @ 25V |
| Power - Max | 1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 0603 1UF 16V Y5V ±20% | TWN |
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| 0603 1UF 16V Y5V ±20% | TY | 4 062 |
1.94 >100 шт. 0.97 |
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| 0603 4.7UF 35V X5R 10% GRM188R6YA475KE15D | MUR |
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| 0603CG200J500NT | FENGHUA | 12 800 |
0.75 >500 шт. 0.25 |
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| 0603CG200J500NT | FNR | 80 034 |
0.66 >500 шт. 0.22 |
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| B82472G6103M000 | EPCOS |
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| B82472G6103M000 | TDK-EPC | 4 018 | 52.47 | |||||
| B82472G6103M000 |
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| IHLP6767GZER100M01 (10UH 16,5A) | 80 |
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