IRFL024NTRPBF
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Версия для печати
| Gate Charge (Qg) @ Vgs | 18.3nC @ 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 2.8A |
| Drain to Source Voltage (Vdss) | 55V |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 2.8A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 400pF @ 25V |
| Power - Max | 1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
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| 1206-X7R-2000V- 1000PF 10% 1206B102K202CT | WALSIN |
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| IRFR9024NTRPBF | INTERNATIONAL RECTIFIER |
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| IRFR9024NTRPBF | INTERNATIONAL RECTIFIER | 4 |
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| IRFR9024NTRPBF | INFINEON | 20 480 | 18.60 | |||||
| IRFR9024NTRPBF | 6 520 | 17.26 | ||||||
| TECAP 22/16V B 20 (TCSCS1C226MBAR) | SAMSUNG | 653 | 10.50 |
