IRFL024NTRPBF
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Версия для печати
| Gate Charge (Qg) @ Vgs | 18.3nC @ 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 2.8A |
| Drain to Source Voltage (Vdss) | 55V |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 2.8A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) @ Vds | 400pF @ 25V |
| Power - Max | 1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
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1N4007 |
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FSC |
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MCC |
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DIC |
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FAIR |
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LD |
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QUAN-HONG |
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XR |
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Диод | DC COMPONENTS | 24 311 | 5.15 | |
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SK16 |
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Диод | SMK |
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Диод | DIODES |
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Диод | SEMICRON |
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SK16 |
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Диод | КИТАЙ |
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SK16 |
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SN74LVC1G3157DBVR | TEXAS INSTRUMEN |
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SN74LVC1G3157DBVR | UMW-YOUTAI |
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SN74LVC1G3157DBVR | 4-7 НЕДЕЛЬ |
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SN74LVC1G3157DBVR | 30 |
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