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MOSFET P-CH -30V -4.3A SOT23 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 48 mOhm @ 4.3A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 4.3A |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 16nC @ 10V |
Input Capacitance (Ciss) @ Vds | 830pF @ 15V |
Power - Max | 1.4W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | SOT-23-3 |
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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2SA812 | DC COMPONENTS |
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2SA812 | 16 | 20.16 | ||||||
2SA812 | 16 | 20.16 | ||||||
NCP1402SN33T1G | ON SEMICONDUCTOR |
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NCP1402SN33T1G |
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72.00 | ||||||
NCP1402SN33T1G | ONS |
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NCP1402SN33T1G | МАЛАЙЗИЯ |
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NCP1402SN33T1G | ON SEMIC |
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NCP1402SN33T1G | ONSEMICONDUCTOR |
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NCP1402SN33T1G | ON SEMICONDUCTO |
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NCP1402SN33T1G | 4-7 НЕДЕЛЬ | 618 |
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SM4007 (1A 1000V) |
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STD10PF06T4 | ST MICROELECTRONICS |
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STD10PF06T4 |
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52.60 | ||||||
STD10PF06T4 | ST MICROELECTRONICS SEMI | 568 |
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STD10PF06T4 | STMicroelectronics |
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STD10PF06T4 | КИТАЙ |
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STD10PF06T4 | ST MICROELECTRO |
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STD10PF06T4 | VBSEMI |
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TEA1530AT | NXP |
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TEA1530AT |
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256.80 | ||||||
TEA1530AT |
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256.80 | ||||||
TEA1530AT | 4-7 НЕДЕЛЬ | 469 |
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Корзина
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