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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 250mA |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 20mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 10V |
| Power - Max | 1.4W |
| Frequency - Transition | 55MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-261-4, TO-261AA |
| Корпус | SOT-223 |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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2SB817 |
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Транзистор S-P 160В, 12A, ISO21, PNP, 100Вт, 15МГц | SANYO |
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2SB817 |
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Транзистор S-P 160В, 12A, ISO21, PNP, 100Вт, 15МГц | 560 | 86.15 | ||
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2SB817 |
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Транзистор S-P 160В, 12A, ISO21, PNP, 100Вт, 15МГц | SAN |
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2SB817 |
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Транзистор S-P 160В, 12A, ISO21, PNP, 100Вт, 15МГц | ISCSEMI |
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2SC5198+2SA1941 ПАРА |
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Транзисторы биполярные 2SC5198+2SA1941 ПАРА | TOS |
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| MF-2 300 5% |
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| MF-2-200K 1% |
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24.00 | ||||||
| NCP1400ASN33T1G | ON SEMICONDUCTOR |
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| NCP1400ASN33T1G | ONS |
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| NCP1400ASN33T1G | ON SEMICONDUCTOR |
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| NCP1400ASN33T1G |
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| NCP1400ASN33T1G | ONSEMICONDUCTOR |
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| NCP1400ASN33T1G | 4-7 НЕДЕЛЬ | 334 |
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