BD679A
Транзистор биполярный составной NPN-Darl 80V 4A 40W
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Версия для печати
| Корпус | SOT-32-3 |
| Корпус (размер) | TO-126-3 |
| Тип монтажа | Выводной |
| Power - Max | 40W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Current - Collector Cutoff (Max) | 500µA |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 40mA, 2A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 4A |
| Transistor Type | NPN - Darlington |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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BD670 (Биполярные транзисторы Дарлингтона) COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Также в этом файле: BD679A
Производитель:
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Аналоги:
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 61 575 | 1.32 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 337 348 | 1.47 | ||
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1N4007 |
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DIOTEC | 112 324 | 2.83 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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QUAN-HONG |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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YANGJIE SEMICONDUCT |
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Fairchild Semiconductor |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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MICROSEMI CORP |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 109 190 | 1.19 | ||
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DIODES INC. |
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MIG |
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MICRO COMMERCIAL COMPONENTS |
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MOTOROLA |
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YJ ELE-NIC CORP |
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RECTIFIER |
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EXTRA COM-NTS |
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GALAXY ELECTRICAL |
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GEMBIRD |
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ТОМИЛИНО |
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EXTRA |
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КИТАЙ | 800 | 4.54 | ||
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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235 005 |
1.66 >100 шт. 0.83 |
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ONS-FAIR |
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ONS |
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ELZET |
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GALAXY ME |
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1N4007 |
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LGE | 33 651 | 1.03 | ||
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1N4007 |
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HOTTECH | 488 418 | 2.18 | ||
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1N4007 |
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KLS | 88 000 | 2.07 | ||
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1N4007 |
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YS |
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YANGJIE | 4 800 | 1.50 | ||
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YANGJIE (YJ) |
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MC |
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FAIRCHILD |
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WUXI XUYANG |
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KUU |
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CHINA | 14 461 | 1.09 | ||
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SUNRISETRON |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1 |
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BL |
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1N4007 |
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SUNTAN | 63 724 | 1.84 | ||
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1N4007 |
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TWGMC | 41 322 |
1.35 >500 шт. 0.45 |
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1N4007 |
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CTK |
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1N4007 |
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JUXING | 112 | 1.78 | ||
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1N4007 |
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ASEMI | 23 073 | 1.06 | ||
| CBB61 5UF 630V (SAIFU) | 820 | 74.62 | ||||||
| DM3-03P-1 125V. 2A |
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ECAP 2200/35V 1625 105C |
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Электролитический алюминиевый конденсатор 2200мкФ, 35В, 105С | JAMICON |
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ECAP 2200/35V 1625 105C |
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Электролитический алюминиевый конденсатор 2200мкФ, 35В, 105С |
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56.00 | ||
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ECAP 2200/35V 1625 105C |
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Электролитический алюминиевый конденсатор 2200мкФ, 35В, 105С | JAM |
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| С1-4-0,125-4,7 КОМ-5% | 308 096 | 4.62 |
