IRF7478PBF
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | HEXFET® |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 26 mOhm @ 4.2A, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 7A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 31nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 1740pF @ 25V |
| Power - Max | 2.5W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SO |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
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|---|---|---|---|---|---|---|---|---|
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BC846BT | NXP |
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BC846BT |
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BC846BT | NXP | 9 |
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BC846BT |
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| BC856BWSOT323 | 0.00 |
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BZX84C3V3LT1G | ON SEMICONDUCTOR |
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61.20 | ||||||
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