|
Версия для печати
| Power - Max | 48W |
| Input Capacitance (Ciss) @ Vds | 1190pF @ 10V |
| Gate Charge (Qg) @ Vgs | 14nC @ 4.5V |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Current - Continuous Drain (Id) @ 25° C | 60A |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) @ Id, Vgs | 8.4 mOhm @ 15A, 10V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Корпус | D-Pak |