DTC114ESA
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 10K |
| Resistor - Emitter Base (R2) (Ohms) | 10K |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Frequency - Transition | 250MHz |
| Power - Max | 300mW |
| Тип монтажа | Выводной |
| Корпус (размер) | SC-72-3, SPT |
| Корпус | SPT |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 2N6039 | ON SEMICONDUCTOR |
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| 2N6039 |
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| 2N6039 | ON SEMICONDUCTOR | 692 |
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| 2N6039 | STMicroelectronics |
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| 2N6039 | ST MICROELECTRO |
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| 2N6039 | ST MICROELECTRONICS |
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| 2N6039 | ISCSEMI |
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| 2N6039 | КИТАЙ |
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| BCP69-16/T1 |
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Транзистор биполярный SMD |
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15.20 | ||||
| BCP69-16/T1 |
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Транзистор биполярный SMD | NXP |
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BT169D.112 |
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Тиристор 400V 0,5A 0.2/5mA | NXP |
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BT169D.112 |
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Тиристор 400V 0,5A 0.2/5mA | WEEN/NXP | 14 710 | 4.72 | |
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BT169D.112 |
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Тиристор 400V 0,5A 0.2/5mA | WEEN / NXP |
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BT169D.112 |
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Тиристор 400V 0,5A 0.2/5mA | WEEN |
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BT169D.112 |
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Тиристор 400V 0,5A 0.2/5mA |
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BT169D.112 |
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Тиристор 400V 0,5A 0.2/5mA | NEX-NXP | 688 | 16.53 | |
| KM681000BLG-5L | SEC |
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| KM681000BLG-5L | SAMSUNG |
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| KM681000BLG-5L |
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| KM681000BLG-5L | 4-7 НЕДЕЛЬ | 77 |
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| MJD122T4G | ON SEMICONDUCTOR |
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| MJD122T4G | ONS |
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| MJD122T4G | ON SEMICONDUCTOR |
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| MJD122T4G |
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