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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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NXP
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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92 224
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1.06
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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ON SEMICONDUCTOR
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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GALAXY
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2 885
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2.70
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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ONS
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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NXP
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3 888
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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Diodes Inc
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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КИТАЙ
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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DI
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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DC COMPONENTS
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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INFINEON
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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DIODES
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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DIOTEC
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20 908
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2.26
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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ONSEMICONDUCTOR
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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GALAXY ME
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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INFINEON
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102
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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LRC
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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HOTTECH
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109 396
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1.36
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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PANJIT
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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SEMTECH
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11
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2.78
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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WUXI XUYANG
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52
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2.44
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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SEMICRON
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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KOME
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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NXP/NEXPERIA
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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YANGJIE (YJ)
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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JSCJ
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54 407
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1.45
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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YJ
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199 046
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1.33
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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XXW
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77 760
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1.17
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BZV55-C5V1 |
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Стабилитрон 0.5Вт, 5.1В, 2мА, 350О м
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PHILIPS
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BZV55-C5V1 |
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Стабилитрон 0.5Вт, 5.1В, 2мА, 350О м
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NXP
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BZV55-C5V1 |
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Стабилитрон 0.5Вт, 5.1В, 2мА, 350О м
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DC COMPONENTS
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142 060
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2.02
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BZV55-C5V1 |
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Стабилитрон 0.5Вт, 5.1В, 2мА, 350О м
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NXP
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BZV55-C5V1 |
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Стабилитрон 0.5Вт, 5.1В, 2мА, 350О м
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PHILIPS
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BZV55-C5V1 |
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Стабилитрон 0.5Вт, 5.1В, 2мА, 350О м
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KINGTRON
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BZV55-C5V1 |
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Стабилитрон 0.5Вт, 5.1В, 2мА, 350О м
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BZV55-C5V1 |
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Стабилитрон 0.5Вт, 5.1В, 2мА, 350О м
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HOTTECH
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440 986
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1.16
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HER206 |
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DC COMPONENTS
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HER206 |
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5 208
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3.15
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L78L05ABD13TR |
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ST MICROELECTRONICS
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39 087
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8.49
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L78L05ABD13TR |
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8 927
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6.72
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L78L05ABD13TR |
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ST MICROELECTRONICS SEMI
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L78L05ABD13TR |
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STMICROELECTRONICS
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40 207
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6.23
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L78L05ABD13TR |
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КИТАЙ
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L78L05ABD13TR |
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ST MICROELECTRO
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L78L05ABD13TR |
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STMICROELECTR
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L78L05ABD13TR |
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0.00
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L78L05ABD13TR |
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4-7 НЕДЕЛЬ
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202
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MMBFJ310LT1G |
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26.00
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MMBFJ310LT1G |
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ON SEMICONDUCTOR
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MMBFJ310LT1G |
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ONS
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2 845
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21.34
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MMBFJ310LT1G |
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ON SEMICONDUCTOR
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81
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