| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 10K |
| Resistor - Emitter Base (R2) (Ohms) | 10K |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Frequency - Transition | 250MHz |
| Power - Max | 200mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
| Product Change Notification | Encapsulate Change 15/May/2008 |
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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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BAV99LT1G |
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2 импульсных диода (последовательное вкл-е, Vr=70V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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ON SEMICONDUCTOR
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BAV99LT1G |
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2 импульсных диода (последовательное вкл-е, Vr=70V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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LESHAN RADIO COMPANY
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BAV99LT1G |
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2 импульсных диода (последовательное вкл-е, Vr=70V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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NXP
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BAV99LT1G |
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2 импульсных диода (последовательное вкл-е, Vr=70V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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ONS
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19 724
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3.41
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BAV99LT1G |
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2 импульсных диода (последовательное вкл-е, Vr=70V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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3 614
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2.24
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BAV99LT1G |
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2 импульсных диода (последовательное вкл-е, Vr=70V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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LESHAN RADIO COMPANY, LTD
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BAV99LT1G |
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2 импульсных диода (последовательное вкл-е, Vr=70V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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ON SEMICONDUCTOR
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11 847
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BAV99LT1G |
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2 импульсных диода (последовательное вкл-е, Vr=70V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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ON SEMICONDUCTO
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BAV99LT1G |
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2 импульсных диода (последовательное вкл-е, Vr=70V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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ONSEMICONDUCTOR
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BAV99LT1G |
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2 импульсных диода (последовательное вкл-е, Vr=70V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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LRC
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BAV99LT1G |
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2 импульсных диода (последовательное вкл-е, Vr=70V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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ONSEMI
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BAV99LT1G |
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2 импульсных диода (последовательное вкл-е, Vr=70V, If=0.2A, Ifsm=1A@t=1s, trr=6ns)
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FUXIN
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21 952
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1.58
>100 шт. 0.79
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HER103 |
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Диод 200V, 1A, 50nS
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GOODWORK SEMICONDUCTER
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HER103 |
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Диод 200V, 1A, 50nS
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TAIWAN SEMICONDUCTOR
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HER103 |
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Диод 200V, 1A, 50nS
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DC COMPONENTS
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9 532
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1.84
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HER103 |
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Диод 200V, 1A, 50nS
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4
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10.08
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HER103 |
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Диод 200V, 1A, 50nS
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MCC
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HER103 |
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Диод 200V, 1A, 50nS
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GOODWORK SEMICONDUCTER, INC.
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HER103 |
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Диод 200V, 1A, 50nS
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TAIWAN SEMICONDUCTOR MANF.
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HER103 |
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Диод 200V, 1A, 50nS
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ТАЙВАНЬ(КИТАЙ)
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HER103 |
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Диод 200V, 1A, 50nS
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КИТАЙ
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HER103 |
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Диод 200V, 1A, 50nS
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KINGTRONICS
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HER103 |
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Диод 200V, 1A, 50nS
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1
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SB240 |
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DIOTEC
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SB240 |
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GENERAL SEMICONDUCTOR
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SB240 |
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7.68
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SB240 |
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SMK
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SB240 |
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GENERAL SEMICONDUCTOR
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49
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SB240 |
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7.68
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TL431ACZ-AP |
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ST MICROELECTRONICS
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4 224
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18.44
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TL431ACZ-AP |
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1 440
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12.11
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TL431ACZ-AP |
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ST MICROELECTRONICS SEMI
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TL431ACZ-AP |
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STMicroelectronics
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TL431ACZ-AP |
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КИТАЙ
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TL431ACZ-AP |
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4-7 НЕДЕЛЬ
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180
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TVR10391KSY |
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ТАЙВАНЬ(КИТАЙ)
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TVR10391KSY |
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TVR10391KSY |
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THINKING
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Версия для печати
