|
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
|
|
1N4007 (1A 1000V) |
|
|
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
MICRO SEMICONDUCTOR
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
EIC
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
ON SEMICONDUCTOR
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
DC COMPONENTS
|
7 882
|
13.38
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
SMK
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
DIOTEC
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
ST MICROELECTRONICS
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
ONS
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
|
7 459
|
6.50
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
OTHER
|
3
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
DIOTEC SEMICONDUCTOR
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
Microsemi Commercial Components Group
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
MULTICOMP
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
KLS
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
HOTTECH
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
MIC
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
1
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
SUNTAN
|
290
|
7.06
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
LGE
|
|
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
|
3 003
|
27.66
|
|
|
|
1N5349B |
|
Стабилитрон Vz=12V(nom), @Iz=100 mA, tol=5%
|
SENOCN
|
24
|
7.99
|
|
|
|
2SC2314 |
|
Биполярный транзистор Si-N, 75V, 1A, PQ=1,8W(27MHz)
|
SANYO
|
|
|
|
|
|
2SC2314 |
|
Биполярный транзистор Si-N, 75V, 1A, PQ=1,8W(27MHz)
|
SAN
|
|
|
|
|
|
2SC2314 |
|
Биполярный транзистор Si-N, 75V, 1A, PQ=1,8W(27MHz)
|
|
|
36.32
|
|
|
|
2SC2314 |
|
Биполярный транзистор Si-N, 75V, 1A, PQ=1,8W(27MHz)
|
США
|
|
|
|
|
|
2SC2314 |
|
Биполярный транзистор Si-N, 75V, 1A, PQ=1,8W(27MHz)
|
СОЕДИНЕННЫЕ ШТА
|
|
|
|
|
|
2SC2314 |
|
Биполярный транзистор Si-N, 75V, 1A, PQ=1,8W(27MHz)
|
КИТАЙ
|
|
|
|
|
|
2SC2314 |
|
Биполярный транзистор Si-N, 75V, 1A, PQ=1,8W(27MHz)
|
ISCSEMI
|
|
|
|
|
|
BTA41-800 |
|
|
|
|
|
|
|
|
BTA41-800 |
|
|
|
|
|
|
|
|
BTA41-800 |
|
|
RUME
|
1 320
|
76.20
|
|
|
|
UHF-BJ |
|
|
|
2 004
|
62.04
|
|