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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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BAV99W |
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(SMD) PBF SOT323
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NXP
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BAV99W |
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(SMD) PBF SOT323
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PHILIPS
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25
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1.61
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BAV99W |
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(SMD) PBF SOT323
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127 916
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1.92
>100 шт. 0.96
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BAV99W |
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(SMD) PBF SOT323
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DC COMPONENTS
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19 170
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2.43
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BAV99W |
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(SMD) PBF SOT323
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NXP
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4 241
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BAV99W |
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(SMD) PBF SOT323
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PHILIPS
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5 020
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BAV99W |
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(SMD) PBF SOT323
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INFINEON TECH
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BAV99W |
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(SMD) PBF SOT323
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NEXPERIA
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BAV99W |
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(SMD) PBF SOT323
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DIOTEC
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2 838
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1.18
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BAV99W |
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(SMD) PBF SOT323
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
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BAV99W |
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(SMD) PBF SOT323
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PHI
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BAV99W |
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(SMD) PBF SOT323
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HOTTECH
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19 244
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2.00
>100 шт. 1.00
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BAV99W |
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(SMD) PBF SOT323
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PANJIT
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BAV99W |
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(SMD) PBF SOT323
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SEMTECH
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BAV99W |
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(SMD) PBF SOT323
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SUNTAN
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12
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2.36
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BAV99W |
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(SMD) PBF SOT323
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KLS
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BAV99W |
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(SMD) PBF SOT323
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1
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BAV99W |
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(SMD) PBF SOT323
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JSCJ
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BAV99W |
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(SMD) PBF SOT323
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XSEMI
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9 000
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1.84
>100 шт. 0.92
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BAV99W |
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(SMD) PBF SOT323
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KEEN SIDE
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20 151
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1.72
>100 шт. 0.86
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BAV99W |
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(SMD) PBF SOT323
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NXP(PHILIPS)
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32
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1.14
>100 шт. 0.57
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BLM31PG601SN1L |
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Дроссель подавления ЭМП ЧИП 600 Ом, ток до 1.5 A
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MURATA
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14 960
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7.20
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BLM31PG601SN1L |
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Дроссель подавления ЭМП ЧИП 600 Ом, ток до 1.5 A
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4
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18.00
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BLM31PG601SN1L |
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Дроссель подавления ЭМП ЧИП 600 Ом, ток до 1.5 A
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MUR
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177 239
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3.79
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BLM31PG601SN1L |
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Дроссель подавления ЭМП ЧИП 600 Ом, ток до 1.5 A
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MURATA
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85 564
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BLM31PG601SN1L |
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Дроссель подавления ЭМП ЧИП 600 Ом, ток до 1.5 A
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Murata Electronics North America
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BLM31PG601SN1L |
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Дроссель подавления ЭМП ЧИП 600 Ом, ток до 1.5 A
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ЯПОНИЯ
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BLM31PG601SN1L |
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Дроссель подавления ЭМП ЧИП 600 Ом, ток до 1.5 A
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MURATA*
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BLM41PG102SN1L |
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Дроссель подавления ЭМП 1806
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MURATA
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BLM41PG102SN1L |
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Дроссель подавления ЭМП 1806
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8
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32.80
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BLM41PG102SN1L |
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Дроссель подавления ЭМП 1806
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MUR
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48 764
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6.74
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BLM41PG102SN1L |
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Дроссель подавления ЭМП 1806
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Murata Electronics North America
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ON SEMICONDUCTOR
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ONS
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41
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14.46
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ON SEMICONDUCTOR
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160
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ON SEMICONDUCTO
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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ONSEMICONDUCTOR
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MMBTA42LT1G |
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Транзистор NPN (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C), Pb-free.
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38 016
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2.33
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTOR
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ONS
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1 760
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8.27
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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7.20
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTOR
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1 003
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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GALAXY
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTO
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ONSEMICONDUCTOR
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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0.00
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