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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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BFG540 |
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Транзистор СВЧ 9 ГГц, 15В, 120мA, 0.4 Вт
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NXP
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BFG540 |
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Транзистор СВЧ 9 ГГц, 15В, 120мA, 0.4 Вт
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PHILIPS
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BFG540 |
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Транзистор СВЧ 9 ГГц, 15В, 120мA, 0.4 Вт
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61.20
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BFG540 |
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Транзистор СВЧ 9 ГГц, 15В, 120мA, 0.4 Вт
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PHILIPS
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BFG540 |
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Транзистор СВЧ 9 ГГц, 15В, 120мA, 0.4 Вт
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ISCSEMI
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BFG540 |
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Транзистор СВЧ 9 ГГц, 15В, 120мA, 0.4 Вт
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ISC
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642
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34.94
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LD1117S33TR |
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СН ``low drop`` (Vinmax=15V, Vout=3.3V, tol=1%, I=0,95A, Udrop=1V@1A, 0 to +125C)
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ST MICROELECTRONICS
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4 182
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20.72
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LD1117S33TR |
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СН ``low drop`` (Vinmax=15V, Vout=3.3V, tol=1%, I=0,95A, Udrop=1V@1A, 0 to +125C)
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4 770
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9.98
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LD1117S33TR |
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СН ``low drop`` (Vinmax=15V, Vout=3.3V, tol=1%, I=0,95A, Udrop=1V@1A, 0 to +125C)
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ST MICROELECTRONICS SEMI
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LD1117S33TR |
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СН ``low drop`` (Vinmax=15V, Vout=3.3V, tol=1%, I=0,95A, Udrop=1V@1A, 0 to +125C)
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STMicroelectronics
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LD1117S33TR |
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СН ``low drop`` (Vinmax=15V, Vout=3.3V, tol=1%, I=0,95A, Udrop=1V@1A, 0 to +125C)
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ST MICROELECTRO
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LD1117S33TR |
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СН ``low drop`` (Vinmax=15V, Vout=3.3V, tol=1%, I=0,95A, Udrop=1V@1A, 0 to +125C)
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STMICROELECTR
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LD1117S33TR |
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СН ``low drop`` (Vinmax=15V, Vout=3.3V, tol=1%, I=0,95A, Udrop=1V@1A, 0 to +125C)
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4-7 НЕДЕЛЬ
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265
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MMBTA42 (2SC4061) SOT-2 |
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTOR
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4 581
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2.12
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ONS
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1 680
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8.27
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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3
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7.20
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTOR
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1 003
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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GALAXY
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTO
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ONSEMICONDUCTOR
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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0.00
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ГД507А |
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Диод импульсный для монтажа в отв. платы, Uоб/Uимп - 20/30В, Iпр/I обр 16мА/100мкА
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4.80
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ГД507А |
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Диод импульсный для монтажа в отв. платы, Uоб/Uимп - 20/30В, Iпр/I обр 16мА/100мкА
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ЭЛЕКС
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