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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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IRLML6401 |
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Транзистор полевой P-канальный MOSFET 1,3Вт, 12В, 4,3А
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INTERNATIONAL RECTIFIER
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IRLML6401 |
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Транзистор полевой P-канальный MOSFET 1,3Вт, 12В, 4,3А
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40 600
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2.92
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IRLML6401 |
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Транзистор полевой P-канальный MOSFET 1,3Вт, 12В, 4,3А
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КИТАЙ
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IRLML6401 |
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Транзистор полевой P-канальный MOSFET 1,3Вт, 12В, 4,3А
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HOTTECH
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200 825
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2.72
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IRLML6401 |
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Транзистор полевой P-канальный MOSFET 1,3Вт, 12В, 4,3А
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INFINEON
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IRLML6401 |
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Транзистор полевой P-канальный MOSFET 1,3Вт, 12В, 4,3А
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HUASHUO
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13 074
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5.51
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IRLML6401 |
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Транзистор полевой P-канальный MOSFET 1,3Вт, 12В, 4,3А
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KLS
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IRLML6401 |
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Транзистор полевой P-канальный MOSFET 1,3Вт, 12В, 4,3А
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YOUTAI
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1
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4.08
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IRLML6401 |
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Транзистор полевой P-канальный MOSFET 1,3Вт, 12В, 4,3А
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UMW
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40
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3.10
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IRLML6401 |
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Транзистор полевой P-канальный MOSFET 1,3Вт, 12В, 4,3А
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SUNTAN
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17 115
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5.53
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IRLML6401 |
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Транзистор полевой P-канальный MOSFET 1,3Вт, 12В, 4,3А
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KEEN SIDE
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8 812
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2.43
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IRLML6401 |
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Транзистор полевой P-канальный MOSFET 1,3Вт, 12В, 4,3А
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2386
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IRLML6401 |
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Транзистор полевой P-канальный MOSFET 1,3Вт, 12В, 4,3А
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KEXIN
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7 200
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2.96
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IRLML6401 |
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Транзистор полевой P-канальный MOSFET 1,3Вт, 12В, 4,3А
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RUME
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91 200
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3.33
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LM1117DT-1.8 |
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ЛСН ``low drop`` (Vout=1.8V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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NATIONAL SEMICONDUCTOR
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LM1117DT-1.8 |
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ЛСН ``low drop`` (Vout=1.8V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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ON SEMICONDUCTOR
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LM1117DT-1.8 |
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ЛСН ``low drop`` (Vout=1.8V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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3
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160.02
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LM1117DT-1.8 |
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ЛСН ``low drop`` (Vout=1.8V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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NSC
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LM1117DT-1.8 |
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ЛСН ``low drop`` (Vout=1.8V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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NATIONAL SEMICONDUCTOR
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24
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LM1117DT-1.8 |
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ЛСН ``low drop`` (Vout=1.8V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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TEXAS INSTRUMENTS
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LM1117DT-1.8 |
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ЛСН ``low drop`` (Vout=1.8V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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NS
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20
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139.50
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LM1117DT-1.8 |
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ЛСН ``low drop`` (Vout=1.8V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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4-7 НЕДЕЛЬ
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LP2985AIM5-1.8 |
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NATIONAL SEMICONDUCTOR
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LP2985AIM5-1.8 |
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100.00
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LP2985AIM5-1.8 |
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NSC
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1
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67.53
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LP2985AIM5-1.8 |
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NATIONAL SEMICONDUCTOR
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LP2985AIM5-1.8 |
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TEXAS INSTRUMENTS
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LP2985AIM5-1.8 |
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NS
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LP2985AIM5-1.8 |
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4-7 НЕДЕЛЬ
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LP2985AIM5-2.8 |
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NATIONAL SEMICONDUCTOR
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LP2985AIM5-2.8 |
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NSC
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LP2985AIM5-2.8 |
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66.12
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LP2985AIM5-2.8 |
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NATIONAL SEMICONDUCTOR
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LP2985AIM5-2.8 |
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МАЛАЙЗИЯ
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LP2985AIM5-2.8 |
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TEXAS INSTRUMENTS
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28
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110.80
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LP2985AIM5-2.8 |
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TEXAS
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LP2985AIM5-2.8 |
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NS
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142
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55.80
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LP2985AIM5-2.8 |
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4-7 НЕДЕЛЬ
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TPD8E003DQDR |
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Texas Instruments
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TPD8E003DQDR |
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TEXAS INSTRUMENTS
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