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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 5A |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 400mA, 2A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 2A, 1V |
| Power - Max | 75W |
| Frequency - Transition | 13MHz |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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IRFBC30 |
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Транзистор полевой N-MOS 600V, 3.6A, 74W | INTERNATIONAL RECTIFIER |
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IRFBC30 |
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Транзистор полевой N-MOS 600V, 3.6A, 74W | VISHAY |
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IRFBC30 |
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Транзистор полевой N-MOS 600V, 3.6A, 74W |
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66.52 | ||
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IRFBC30 |
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Транзистор полевой N-MOS 600V, 3.6A, 74W | Vishay/Siliconix |
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IRFBC30 |
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Транзистор полевой N-MOS 600V, 3.6A, 74W | КИТАЙ |
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IXTH8P50 |
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Standard power mosfet | IXYS |
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IXTH8P50 |
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Standard power mosfet | IXYS CORPORATION |
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IXTH8P50 |
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Standard power mosfet |
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1 224.04 | ||
| L4981BD | ST MICROELECTRONICS |
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| L4981BD |
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464.00 | ||||||
| L4981BD | ST MICROELECTRONICS SEMI | 452 |
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| L4981BD | STMicroelectronics |
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| L4981BD | ST1 |
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| L4981BD | ST MICROELECTRO |
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| L4981BD | 4-7 НЕДЕЛЬ | 646 |
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| NCP1203D60R2G |
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134.00 | ||||||
| NCP1203D60R2G | ON SEMICONDUCTOR |
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| NCP1203D60R2G | ONS |
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| NCP1203D60R2G | ON SEMICONDUCTO |
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| NCP1203D60R2G | 4-7 НЕДЕЛЬ | 116 |
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| UC3842BD1 | ON SEMICONDUCTOR |
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| UC3842BD1 |
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74.40 | ||||||
| UC3842BD1 | ON SEMICONDUCTOR |
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| UC3842BD1 | STMicroelectronics |
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| UC3842BD1 | ST MICROELECTRONICS | 800 | 53.88 | |||||
| UC3842BD1 | 4-7 НЕДЕЛЬ | 214 |
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